ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
®
TRANSZORB Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
Case Style 1.5KE
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
TYPICAL APPLICATIONS
VBR (uni-directional)
6.0 V to 21.2 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
V
BR (bi-directional)
PPPM
9.2 V to 21.2 V
1500 W
PD
6.5 W
IFSM
200 A
175 °C
MECHANICAL DATA
TJ max.
Polarity
Package
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Base P/NHE3 - RoHS compliant and AEC-Q101 qualified
Uni-directional, bi-directional
1.5KE
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
LIMIT
1500
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
See next table
6.5
A
PD
W
IFSM
200
A
VF
3.5
V
TJ, TSTG
- 55 to + 175
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
(2)
Revision: 18-Sep-12
Document Number: 88356
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000