Datasheet > 存储 > DRAM> IC41C8512-50K

IC41C8512-50K

更新时间： 2024-01-20 20:34:11

品牌	Logo	应用领域
矽成 - ICSI		/
页数	文件大小	规格书
21页	226K
描述
512K x 8 bit Dynamic RAM with EDO Page Mode

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IC41C8512-50K 数据手册

IC41C8512

IC41LV8512

AC CHARACTERISTICS (Continued)^{(1,2,3,4,5,6)}

(Recommended Operating Conditions unless otherwise noted.)

Min. Max.

-50

-60

Symbol

Parameter

Min. Max.

Units

t^ACH

Column-Address Setup Time to CAS

Precharge during WRITE Cycle

—

t^OEH

OE Hold Time from WE during

—

READ-MODIFY-WRITE cycle⁽¹⁸⁾

tDS

Data-In Setup Time^{(15, 22)}

Data-In Hold Time^{(15, 22)}

—

tDH

tRWC

t^RWD

READ-MODIFY-WRITE Cycle Time

125

140

RAS to WE Delay Time during

READ-MODIFY-WRITE Cycle⁽¹⁴⁾

tCWD

tAWD

t^PC

CAS to WE Delay Time^{(14, 20)}

—

Column-Address to WE Delay Time⁽¹⁴⁾

EDO Page Mode READ or WRITE

Cycle Time⁽²⁴⁾

tRASP

tCPA

RAS Pulse Width in EDO Page Mode

Access Time from CAS Precharge⁽¹⁵⁾

35 100K

50 100K

—

t^PRWC

EDO Page Mode READ-WRITE

Cycle Time⁽²⁴⁾

tCOH

tOFF

Data Output Hold after CAS LOW

—

Output Buffer Turn-Off Delay from

(13,15,19, 29)

CAS or RAS

tWHZ

Output Disable Delay from WE

—

tCLCH

Last CAS going LOW to First CAS

returning HIGH⁽²³⁾

tCSR

tCHR

tORD

CAS Setup Time (CBR REFRESH)^{(30, 20)}

—

CAS Hold Time (CBR REFRESH)^{(30, 21)}

OE Setup Time prior to RAS during

HIDDEN REFRESH Cycle

tREF

Refresh Period (512 Cycles)

Transition Time (Rise or Fall)^{(2, 3)}

—

AC TEST CONDITIONS

Output load:

Two TTL Loads and 50 pF (Vcc = 5.0V ±10%)

One TTL Load and 50 pF (Vcc = 3.3V ±10%)

Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V ±10%);

VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V ±10%)

Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5V ±10%, 3.3V ±10%)

Integrated Circuit Solution Inc.

DR029-0A 09/28/2001

1...6 7 8910 11 12...21

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与IC41C8512-50K相关器件

型号	品牌	获取价格	描述	数据表
IC41C8512-50KI	ICSI	获取价格	512K x 8 bit Dynamic RAM with EDO Page Mode
IC41C8512-50KI	ISSI	获取价格	EDO DRAM, 512KX8, 50ns, CMOS, PDSO28, 0.400 INCH, SOJ-28
IC41C8512-50T	ICSI	获取价格	512K x 8 bit Dynamic RAM with EDO Page Mode
IC41C8512-50T	ISSI	获取价格	EDO DRAM, 512KX8, 50ns, CMOS, PDSO28, 0.400 INCH, TSOP2-28
IC41C8512-50TI	ICSI	获取价格	512K x 8 bit Dynamic RAM with EDO Page Mode
IC41C8512-50TI	ISSI	获取价格	EDO DRAM, 512KX8, 50ns, CMOS, PDSO28, 0.400 INCH, TSOP2-28
IC41C8512-60K	ICSI	获取价格	512K x 8 bit Dynamic RAM with EDO Page Mode
IC41C8512-60K	ISSI	获取价格	EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, SOJ-28
IC41C8512-60KI	ICSI	获取价格	512K x 8 bit Dynamic RAM with EDO Page Mode
IC41C8512-60KI	ISSI	获取价格	EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, SOJ-28

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