是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | 0.400 INCH, SOJ-40 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | Is Samacsys: | N |
访问模式: | FAST PAGE | 最长访问时间: | 35 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-J40 | JESD-609代码: | e0 |
内存密度: | 1048576 bit | 内存集成电路类型: | FAST PAGE DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 40 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 64KX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOJ | 封装等效代码: | SOJ40,.44 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
电源: | 5 V | 认证状态: | Not Qualified |
刷新周期: | 256 | 自我刷新: | NO |
最大待机电流: | 0.001 A | 子类别: | DRAMs |
最大压摆率: | 0.13 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IC41C1665-35T | ICSI |
获取价格 |
64K x16 bit Dynamic RAM with Fast Page Mode | |
IC41C1665-35T | ISSI |
获取价格 |
Fast Page DRAM, 64KX16, 35ns, CMOS, PDSO40, 0.400 INCH, TSOP2-40 | |
IC41C1665-35TI | ISSI |
获取价格 |
Fast Page DRAM, 64KX16, 35ns, CMOS, PDSO40, 0.400 INCH, TSOP2-40 | |
IC41C1665-35TI | ICSI |
获取价格 |
64K x16 bit Dynamic RAM with Fast Page Mode | |
IC41C1665-40K | ICSI |
获取价格 |
64K x16 bit Dynamic RAM with Fast Page Mode | |
IC41C1665-40KI | ICSI |
获取价格 |
64K x16 bit Dynamic RAM with Fast Page Mode | |
IC41C1665-40T | ICSI |
获取价格 |
64K x16 bit Dynamic RAM with Fast Page Mode | |
IC41C1665-40TI | ICSI |
获取价格 |
64K x16 bit Dynamic RAM with Fast Page Mode | |
IC41C1665-40TI | ISSI |
获取价格 |
Fast Page DRAM, 64KX16, 40ns, CMOS, PDSO40, 0.400 INCH, TSOP2-40 | |
IC41C4100 | ICSI |
获取价格 |
1Mx4 bit Dynamic RAM with EDO Page Mode |