IC41C16100S-60KI

更新时间： 2024-01-01 12:49:56

品牌	Logo	应用领域
矽成 - ICSI		存储内存集成电路光电二极管动态存储器
页数	文件大小	规格书
21页	673K
描述
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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技术参数
数据手册

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IC41C16100S-60KI 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.75	Base Number Matches：	1

IC41C16100S-60KI 数据手册

IC41C16100S

IC41LV16100S

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

Symbol Parameters

Rating

Unit

V^T

Voltage on Any Pin Relative to GND

–1.0 to +7.0

3.3V

–0.5 to +4.6

V^CC

Supply Voltage

–1.0 to +7.0

–0.5 to +4.6

3.3V

IOUT

Output Current

Power Dissipation

Commercial Operation Temperature

0 to +70

°C

Industrial Operationg Temperature

–40 to +85

°C

TSTG

Storage Temperature

–55 to +125

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)

Symbol

Parameter

Min.

Typ.

Max.

Unit

VCC

Supply Voltage

4.5

5.0

5.5

3.3V

3.0

3.3

3.6

VIH

V^IL

Input High Voltage

Input Low Voltage

2.4

2.0

—

VCC + 1.0

VCC + 0.3

3.3V

–1.0

—

0.8

3.3V

–0.3

—

0.8

Commercial Ambient Temperature

Industrial Ambient Temperature

—

°C

–40

CAPACITANCE^(1,2)

Symbol

Parameter

Input Capacitance: A0-A9

Max.

Unit

CIN1

CIN2

CIO

Input Capacitance: RAS, UCAS, LCAS, WE, OE

Data Input/Output Capacitance: I/O0-I/O15

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz.

Integrated Circuit Solution Inc.

DR010-0D 11/26/2004

1...3 4 567 8 9...21

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