Datasheet > IBM041812PQKB-8

IBM041812PQKB-8

更新时间： 2023-01-02 13:46:45

品牌	Logo	应用领域
国际商业机器公司 - IBM		静态存储器
页数	文件大小	规格书
14页	218K
描述
Standard SRAM, 64KX18, 8ns, CMOS, PQFP100, TQFP-100

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IBM041812PQKB-8 数据手册

IBM043614PQK32K

x 36Burst (PowerPC), TQFP package.

IBM041812PQKB

Preliminary

Features

64K X 18 BURST SRAM

• 5 V Tolerant I/O

• 64K x 18 Synchronous Burst Mode SRAM

• 0.5µ CMOS Technology

• Asynchronous Output Enable

• Compatible with Pentium^TMand i486^TMproces-

sors

• Self-Timed Write Operation and Byte Write

Capability

• Supports Pentium^TMAddress Pipelining

• LVTTL I/O Compatible with common I/O

• Single +3.3 V ± 5% Power Supply and Ground

• Low Power Dissipation

- 1.1 W Active at 83MHz

- 90 mW Standby

• 100 Pin Thin Quad Flat Pack

• Registered Addresses, Data Ins and Control

Signals

Description

IBM Microelectronics 1M SRAM is a Synchronous

Burstable, high performance CMOS Static RAM that

is versatile, wide I/O, and achieves 8 nanosecond

access. A single clock is used to initiate the

read/write operation and all internal operations are

self-timed. At the rising edge of the Clock, all

Addresses, Data Ins and Control Signals are regis-

tered internally. Burst mode operation, is accom-

plished by integrating input registers, internal 2-bit

burst counter and high speed SRAM in a single chip.

Burst reads are initiated with either ADSP or ADSC

being LOW with a valid address during the rising

edge of clock. Data from this address plus the three

subsequent addresses will be output. The chip is

operated with a single +3.3 V power supply and is

compatible with LVTTL I/O interfaces.

Use is further subject to the provisions at the end of this document.

26H4672

SA14-4663-01

Revised 9/97

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