HZS12NB2TD

更新时间： 2024-11-02 13:08:35

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HZS12NB2TD 数据手册

HZS-N Series

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

REJ03G0185-0100Z

(Previous: ADE-208-124)

Rev.1.00

Mar.11.2004

Features

•

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

power supply, etc.

•

Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-N Series

Type No.

MHD

Pin Arrangement

Type No.

Cathode band

1. Cathode

2. Anode

Rev.1.00, Mar.11.2004, page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
HZS12NB2TD-E	RENESAS	获取价格	暂无描述
HZS12NB2TDX	RENESAS	获取价格	0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
HZS12NB3	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS12NB3TD-E	RENESAS	获取价格	HZS12NB3TD-E
HZS12NB3TE	RENESAS	获取价格	0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
HZS12NB4	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS13N	RENESAS	获取价格	VOLTAGE REGULATOR DIODE
HZS13NB1	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS13NB1RY	RENESAS	获取价格	暂无描述
HZS13NB1TA	RENESAS	获取价格	0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN