Datasheet > HY6N60T

HY6N60T

更新时间： 2024-01-27 06:25:26

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	111K
描述
600V / 6.0A N-Channel Enhancement Mode MOSFET

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中文翻译

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技术参数
数据手册

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HY6N60T 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

HY6N60T 数据手册

HY6N60T / HY6N60FT

600V / 6.0A

600V, R_DS(ON)=1.8Ω@V_GS=10V, I_D=3.0A

N-Channel Enhancement Mode MOSFET

Features

• Low ON Resistance

• Fast Switching

• Low Gate Charge & Low C_RSS

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charger and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

Mechanical Information

ITO-220AB

TO-220AB

• Case: TO-220AB / ITO-220AB Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

Drain

Marking & Ordering Information

TYPE

MARKING

6N60T

PACKAGE

TO-220AB

ITO-220AB

PACKING

50PCS/TUBE

Gate

HY6N60T

HY6N60FT

Source

6N60FT

Absolute Maximum Ratings (T_C=25^OC unless otherwise noted )

Parameter

Symbol

V_DS

HY6N60T

HY6N60FT Units

Drain-Source Voltage

Gate-Source Voltage

600

+30

V_GS

I_D

T_C=25^OC

Continuous Drain Current

Pulsed Drain Current

I_DM

Maximum Power Dissipation

Derating Factor

36.8

0.29

P_D

0.69

Avalanche Energy with Single Pulse

E_AS

324

-55 to +150

^OC

I_AS=6A, VDD=90V, L=18mΗ

Operating Junction and Storage Temperature Range

T_J,T_STG

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

PARAMETER

Symbol

HY6N60T

HY6N60FT

3.4

Units

^OC/W

Junction-to-Case Thermal Resistance

Junction-to Ambient Thermal Resistance

1.45

62.5

θJC

100

^OC/W

θJA

COMPANYRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE

REV1.0 : AUG. 2011

PAGE . 1

12 3 4

中文翻译

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