Datasheet > HY7N80T

HY7N80T

更新时间： 2024-09-23 12:26:11

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	232K
描述
800V / 7A N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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HY7N80T 数据手册

HY7N80T / HY7N80FT

800V / 7A

800V, R_DS(ON)=1.65W@V_GS=10V, I_D=3.5A

N-Channel Enhancement Mode MOSFET

Features

• Low On-State Resistance

TO-220AB

ITO-220AB

• Fast Switching

• Low Gate Charge & Low C_RSS

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charger and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

Mechanical Information

• Case: TO-220AB / ITO-220AB Molded Plastic

Drain

• Terminals : Solderable per MIL-STD-750,Method 2026

Marking & Ordering Information

TYPE

MARKING

PACKAGE

TO-220AB

ITO-220AB

PACKING

50PCS/TUBE

Gate

HY7N80T

HY7N80FT

7N80T

Source

7N80FT

Absolute Maximum Ratings (T_C=25°C unless otherwise specified )

Parameter

Symbol

V_DS

HY7N80T

HY7N80FT

Units

Drain-Source Voltage

Gate-Source Voltage

800

+30

V_GS

I_D

Continuous Drain Current

Pulsed Drain Current ¹⁾

T_C=25℃

I_DM

147

1.23

0.4

Maximum Power Dissipation

Derating Factor

P_D

Avalanche Energy with Single Pulse

I_AS=7A, V_DD=123V, L=18.5mH

E_AS

450

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

℃

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

Parameter

Junction-to-Case Thermal Resistance

Symbol

HY7N80T

HY7N80FT

2.5

Units

R_qJC

R_qJA

0.85

62.5

100

COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE

REV 1.0, 25-Sept-2012

PAGE.1

12 3 4

中文翻译

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