HY8N65T / HY8N65FT
650V / 8A
650V, RDS(ON)=1.4Ω@VGS=10V, ID=4.0A
N-Channel Enhancement Mode MOSFET
Features
• Low ON Resistance
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
1
2
S
2
S
G
G
3
3
D
D
Mechanical Information
ITO-220AB
TO-220AB
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
2
Drain
Marking & Ordering Information
TYPE
MARKING
8N65T
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
1
Gate
HY8N65T
HY8N65FT
Source
3
8N65FT
Absolute Maximum Ratings (TC=25OC unless otherwise noted )
Parameter
Symbol
VDS
HY8N65T
HY
650
+30
8
N65FT
Units
V
Drain-Source Voltage
Gate-Source Voltage
VGS
ID
V
A
A
TC=25OC
TC=25OC
Continuous Drain Current
8
8
1)
Pulsed Drain Current
IDM
32
32
45
Maximum Power Dissipation
Derating Factor
125
1.0
PD
W
0.36
Avalanche Energy with Single Pulse
EAS
416
-55 to +150
mJ
OC
IAS=8A, VDD=50V, L=13mΗ
Operating Junction and Storage Temperature Range
TJ,TSTG
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
PARAMETER
Symbol
HY8N65T
HY8N65FT
2.78
Units
OC/W
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
R
1.0
θJC
R
62.5
100
OC/W
θJA
COMPANYRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE
REV1.0 : AUG. 2011
PAGE . 1