Datasheet > HY80N07T

HY80N07T

更新时间： 2024-09-23 12:26:11

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	228K
描述
65V / 80A N-Channel Enhancement Mode MOSFET

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数据手册

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HY80N07T 数据手册

HY80N07T

65V / 80A

65V, R_DS(ON)=7.2mW@V_GS=10V, I_D=30A

N-Channel Enhancement Mode MOSFET

Features

• Low On-State Resistance

TO-220AB

• Excellent Gate Charge x R_DS(ON)Product ( FOM )

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for DC-DC Converter, Off-line UPS,

Automotive System, Solenoid and Motor Control

• In compliance with EU RoHs 2002/95/EC Directives

Drain

Mechanical Information

• Case: TO-220AB Molded Plastic

Gate

• Terminals : Solderable per MIL-STD-750,Method 2026

Source

Marking & Ordering Information

TYPE

MARKING

PACKAGE

PACKING

HY80N07T

80N07T

TO-220AB

50PCS/TUBE

Absolute Maximum Ratings (T_C=25°C unless otherwise specified )

Parameter

Value

Units

Symbol

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

+20

Continuous Drain Current ¹⁾

Pulsed Drain Current ¹⁾

T_C=25℃

I_DM

320

Maximum Power Dissipation

Derating Factor

96.7

0.65

P_D

E_AS

Avalanche Energy with Single Pulse, L=0.3mH

200

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 to +175

℃

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

Parameter

Symbol

R_qJC

Value

1.55

Units

℃/W

Junction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance

R_qJA

62.5

COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE

PAGE.1

REV. 1.0, 30-Jul-2012

12 3 4

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