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HY62SF16804B-DF85C PDF预览

HY62SF16804B-DF85C

更新时间: 2024-02-25 11:20:11
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器内存集成电路
页数 文件大小 规格书
10页 157K
描述
Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, FBGA-48

HY62SF16804B-DF85C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:85 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:8.5 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8/2 V
认证状态:Not Qualified座面最大高度:1.1 mm
最小待机电流:1.2 V子类别:SRAMs
最大压摆率:0.015 mA最大供电电压 (Vsup):2.3 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

HY62SF16804B-DF85C 数据手册

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HY62SF16804B Series  
512Kx16bit full CMOS SRAM  
Document Title  
512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM  
Revision History  
Revision No History  
Draft Date  
May.29.2001 Preliminary  
Oct.22.2002 Final  
Remark  
00  
01  
Initial Release  
DC Electrical Characteristics  
- ICC changed 4mA -> 3mA  
- ICC1 changed 25mA at 70ns -> 15mA at 70ns  
- ICC1 changed 3mA at 1us -> 2mA at 1us  
- ISB (TTL) changed 50uA -> 300uA  
AC Test Loads  
- (R1//R2) 4091Ohm // 3273Ohm -> 3070Ohm // 3150Ohm  
AC Test Conditions  
- Output Load changed 5pF -> 30pF  
- Input Pulse Level 0.4V to 1.6V -> 0.2V to Vcc-0.2  
Data Retention Electric Characteristic  
- ICCDR LL-Part changed 20uA -> 10uA  
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.01 /Oct.2002  
Hynix Semiconductor  

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