生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, BGA48,6X8,30 | 针数: | 48 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 70 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B48 | JESD-609代码: | e1 |
长度: | 8.5 mm | 内存密度: | 8388608 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 512KX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA48,6X8,30 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 电源: | 2.5 V |
认证状态: | Not Qualified | 座面最大高度: | 1.1 mm |
最小待机电流: | 1.2 V | 子类别: | SRAMs |
最大压摆率: | 0.03 mA | 最大供电电压 (Vsup): | 2.7 V |
最小供电电压 (Vsup): | 2.3 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | TIN SILVER COPPER |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY62LF16806B-SF85I | HYNIX |
获取价格 |
Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, FBGA-48 | |
HY62LF16806B-SFC | HYNIX |
获取价格 |
512Kx16bit full CMOS SRAM | |
HY62LF16806B-SFI | HYNIX |
获取价格 |
512Kx16bit full CMOS SRAM | |
HY62QF16100CLLF-70 | HYNIX |
获取价格 |
Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, FINE PITCH, BGA-48 | |
HY62QF16100CSLF-85 | HYNIX |
获取价格 |
Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, FINE PITCH, BGA-48 | |
HY62QF16100CSLF-I-10 | HYNIX |
获取价格 |
Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, FINE PITCH, BGA-48 | |
HY62QF16100CSLF-I-85 | HYNIX |
获取价格 |
Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, FINE PITCH, BGA-48 | |
HY62QF16100LLM-10I | HYNIX |
获取价格 |
Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, MICRO, BGA-48 | |
HY62QF16100LLM-12I | HYNIX |
获取价格 |
Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, MICRO, BGA-48 | |
HY62QF16100LLM-85I | HYNIX |
获取价格 |
Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, MICRO, BGA-48 |