5秒后页面跳转
HY6264AJ-10 PDF预览

HY6264AJ-10

更新时间: 2024-11-29 23:57:15
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 143K
描述
x8 SRAM

HY6264AJ-10 数据手册

 浏览型号HY6264AJ-10的Datasheet PDF文件第2页浏览型号HY6264AJ-10的Datasheet PDF文件第3页浏览型号HY6264AJ-10的Datasheet PDF文件第4页浏览型号HY6264AJ-10的Datasheet PDF文件第5页浏览型号HY6264AJ-10的Datasheet PDF文件第6页浏览型号HY6264AJ-10的Datasheet PDF文件第7页 
HY6264A Series  
8Kx8bit CMOS SRAM  
minimize current drain is unnecessary for the  
HY6264A Series.  
DESCRIPTION  
FEATURES  
The HY6264A is a high-speed, low power and  
8,192x8-bits CMOS static RAM fabricated using  
Hyundai's high performance twin tub CMOS  
process technology. This high reliability process  
coupled with innovative circuit design techniques,  
yields maximum access time of 70ns. The  
HY6264A has a data retention mode that  
guarantees data to remain valid at the minimum  
power supply voltage of 2.0 volt. Using the CMOS  
technology, supply voltage from 2.0 to 5.5 volt  
has little effect on supply current in the data  
retention mode. Reducing the supply voltage to  
·
·
·
·
Fully static operation and Tri-state outputs  
TTL compatible inputs and outputs  
Low power consumption  
Battery backup(L/LL-part)  
-2.0V(min.) data retention  
Standard pin configuration  
-28 pin 600 mil PDIP  
·
-28 pin 330 mil SOP  
Product  
No.  
HY6264A  
Voltage  
(V)  
Speed  
(ns)  
70/85/100  
Operation  
Current(mA)  
50  
Standby Current(uA)  
Temperature  
(°C)  
0~70(Normal)  
L
100  
LL  
10  
5.0  
1mA  
Note 1. Current value is max.  
PIN CONNECTION  
BLOCK DIAGRAM  
ROW DECODER  
I/O1  
A0  
Vcc  
NC  
A12  
A7  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
NC  
A12  
A7  
Vcc  
/WE  
CS2  
A8  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
/WE  
CS2  
A8  
3
3
A6  
4
A6  
4
A9  
A5  
5
A5  
A9  
5
MEMORY ARRAY  
128x512  
A4  
A11  
/OE  
A10  
/CS1  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
6
A11  
/OE  
A10  
/CS1  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
A4  
6
A3  
7
A3  
7
A2  
8
A2  
8
A1  
A1  
9
9
A0  
10  
11  
12  
13  
14  
A0  
10  
11  
12  
13  
14  
A12  
I/O1  
I/O2  
I/O3  
Vss  
I/O8  
I/O1  
I/O2  
I/O3  
Vss  
/CS1  
CS2  
/OE  
PDIP  
SOP  
/WE  
PIN DESCRIPTION  
Pin Name  
/CS1  
Pin Function  
Chip Select 1  
Chip Select 2  
Write Enable  
Output Enable  
Address Inputs  
Pin Name  
Pin Function  
Data Input/Output  
Power(+5V)  
I/O1-I/O8  
Vcc  
CS2  
/WE  
Vss  
Ground  
/OE  
NC  
No Connect  
A0-A12  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.02 /Jan.99  
Hyundai Semiconductor  

与HY6264AJ-10相关器件

型号 品牌 获取价格 描述 数据表
HY6264AJ-10I HYNIX

获取价格

Standard SRAM, 8KX8, 100ns, CMOS
HY6264AJ-12 ETC

获取价格

x8 SRAM
HY6264AJ-15 ETC

获取价格

x8 SRAM
HY6264AJ-70 ETC

获取价格

x8 SRAM
HY6264AJ-70I HYNIX

获取价格

Standard SRAM, 8KX8, 70ns, CMOS
HY6264AJ-85 ETC

获取价格

x8 SRAM
HY6264AJ-85I HYNIX

获取价格

Standard SRAM, 8KX8, 85ns, CMOS
HY6264ALJ-100 HYNIX

获取价格

Standard SRAM, 8KX8, 100ns, CMOS, PDSO28, 0.330 INCH, SOP-28
HY6264ALJ-10I ETC

获取价格

x8 SRAM
HY6264ALJ-12 ETC

获取价格

x8 SRAM