5秒后页面跳转
HY62256BLLR1-85 PDF预览

HY62256BLLR1-85

更新时间: 2024-11-28 23:57:15
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
9页 146K
描述
x8 SRAM

HY62256BLLR1-85 数据手册

 浏览型号HY62256BLLR1-85的Datasheet PDF文件第2页浏览型号HY62256BLLR1-85的Datasheet PDF文件第3页浏览型号HY62256BLLR1-85的Datasheet PDF文件第4页浏览型号HY62256BLLR1-85的Datasheet PDF文件第5页浏览型号HY62256BLLR1-85的Datasheet PDF文件第6页浏览型号HY62256BLLR1-85的Datasheet PDF文件第7页 
HY62256B Series  
32Kx8bit CMOS SRAM  
DESCRIPTION  
FEATURES  
The HY62256B is a high-speed, low power and  
32,786 X 8-bits CMOS Static Random Access  
·
·
·
·
Fully static operation and Tri-state output  
TTL compatible inputs and outputs  
Low power consumption  
Battery backup(L/LL-part)  
- 2.0V(min.) data retention  
Standard pin configuration  
- 28 pin 600 mil PDIP  
- 28 pin 330mil SOP  
- 28 pin 8x13.4 mm TSOP-I  
(Standard and Reversed)  
Memory fabricated using  
Hyundai's high  
performance CMOS process technology. It is  
suitable for use in low voltage operation and  
battery back-up application. This device has a  
data retention mode that guarantees data to  
remain valid at the minimum power supply  
voltage of 2.0 volt.  
·
Product  
No.  
HY62256B  
Voltage  
(V)  
Speed  
(ns)  
55/70/85  
Operation  
Current(mA)  
8
Standby Current(uA)  
Temperature  
(°C)  
0~70(Normal)  
L
100  
LL  
25  
5.0  
1mA  
Note 1. Current value is max.  
PIN CONNECTION  
Vcc  
A14  
A12  
A7  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A14  
A12  
A7  
Vcc  
/WE  
A13  
A8  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
/WE  
A13  
A8  
/OE  
A11  
A9  
A10  
/CS  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
Vss  
I/O3  
I/O2  
I/O1  
A0  
A3  
A4  
A2  
3
1
2
28  
14  
13  
12  
11  
10  
9
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
3
A1  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A6  
4
A6  
4
A5  
A0  
3
A5  
A9  
5
A5  
A9  
5
A8  
A6  
I/O1  
I/O2  
I/O3  
Vss  
I/O4  
I/O5  
I/O6  
I/O7  
I/O8  
/CS  
A10  
4
A4  
A11  
/OE  
A10  
/CS  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
6
A11  
/OE  
A10  
/CS  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
A4  
6
A13  
/WE  
Vcc  
A14  
A12  
A7  
A7  
5
A3  
7
A3  
7
A12  
A14  
Vcc  
/WE  
A13  
A8  
6
A2  
8
A2  
7
8
8
A1  
8
7
9
A1  
9
9
6
A0  
A0  
10  
11  
12  
13  
14  
10  
11  
12  
13  
14  
10  
11  
12  
13  
14  
5
I/O1  
I/O2  
I/O3  
Vss  
I/O1  
I/O2  
I/O3  
Vss  
A6  
4
A5  
A9  
A11  
/OE  
3
A4  
A1  
2
1
A3  
A2  
PDIP  
SOP  
TSOP-I(Standard)  
TSOP-I(Reversed)  
PIN DESCRIPTION  
BLOCK DIAGRAM  
ROW DECODER  
I/O1  
A0  
Pin Name  
Pin Function  
Chip Select  
Write Enable  
/CS  
/WE  
MEMORY ARRAY  
512x512  
/OE  
Output Enable  
Address Inputs  
Data Input/Output  
Power(+5.0V)  
Ground  
A0 ~ A14  
I/O1 ~ I/O8  
Vcc  
A14  
I/O8  
/CS  
Vss  
/OE  
/WE  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.04 /Jan.99  
Hyundai Semiconductor  

与HY62256BLLR1-85相关器件

型号 品牌 获取价格 描述 数据表
HY62256BLLR1-85I HYNIX

获取价格

Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
HY62256BLLT1-10 HYNIX

获取价格

Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
HY62256BLLT1-10I ETC

获取价格

x8 SRAM
HY62256BLLT1-55 HYNIX

获取价格

Standard SRAM, 32KX8, 55ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
HY62256BLLT1-55I HYNIX

获取价格

Standard SRAM, 32KX8, 55ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
HY62256BLLT1-70 HYNIX

获取价格

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
HY62256BLLT1-70I HYNIX

获取价格

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
HY62256BLLT1-85 HYNIX

获取价格

Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
HY62256BLLT1-85I HYNIX

获取价格

Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
HY62256BLP-10 HYNIX

获取价格

Standard SRAM, 32KX8, 100ns, CMOS, PDIP28