Datasheet > HY62256ALP-I

HY62256ALP-I

更新时间： 2022-11-27 00:26:18

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
14页	822K
描述
32Kx8bit CMOS SRAM

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数据手册

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HY62256ALP-I 数据手册

-sram/62256alt1

http://www.hea.com/hean2/sram/62256alt1.htm

DATA RETENTION CHARACTERISTIC

TA= 0°C to 70°C (normal) /-40°C to 85°C (E.T.)

Symbol

Parameter

Test Condition Min Typ Max Unit

/CS >= Vcc-0.2V

Vss <= VIN <=

Vcc

VDR

Vcc for Data Re! ention

Vcc = 3.0V

/CS >= Vcc

-0.2V

Vss <= VIN

<= Vcc

50 uA

15(2) uA

50 uA

Data

Retention

Current

HY62256A

LL -

ICCDR

HY62256A-1

Chip Disable to Data Retention

Time

See Data

Retention Timing

Diagram

tCDR

Operating Recovery Time

tRC(3) -

Notes

1. Typical values are under the condition of TA = 25°C

2. 3uA max. at TA= 0°C to 40°C

3. tRC is read cycle time.

Data Retention Timing Diagram

RELIABILITY SPEC.

TEST MODE

TEST SPEC.

>= 2000V

>= 250V

HBM

ESD

<= -100mA

>= 100mA

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Phone: 408-232-8000 URL: http://www.hea.com/

SRAM Data Sheets | Memory Products | email: DRAMSRAMmemory@hea.com

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