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HY62256ALLP PDF预览

HY62256ALLP

更新时间: 2024-11-18 22:05:39
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器
页数 文件大小 规格书
14页 822K
描述
32Kx8bit CMOS SRAM

HY62256ALLP 数据手册

 浏览型号HY62256ALLP的Datasheet PDF文件第2页浏览型号HY62256ALLP的Datasheet PDF文件第3页浏览型号HY62256ALLP的Datasheet PDF文件第4页浏览型号HY62256ALLP的Datasheet PDF文件第5页浏览型号HY62256ALLP的Datasheet PDF文件第6页浏览型号HY62256ALLP的Datasheet PDF文件第7页 
Data Sheet-sram/62256ald1  
http://www.hea.com/hean2/sram/62256ald1.htm  
HY62256A-(I) Series  
32Kx8bit CMOS SRAM  
Description  
Features  
The  
Fully static operation and  
Tri-state outputs  
·
·
·
HY62256A/HY62256A-I  
is a high-speed, low  
power and 32,786 x 8-bits  
CMOS Static Random  
Access Memory  
TTL compatible inputs  
and outputs  
Low power consumption  
-2.0V(min.) data  
retention  
fabricated using  
Hyundai's high  
Standard pin  
configuration  
-28 pin 600 mil PDIP  
-28 pin 330 mil SOP  
-28 pin 8x13.4 mm  
TSOP-1  
·
performance CMOS  
process technology. The  
HY62256A/HY62256A-I  
has a data retention mode  
that guarantees data to  
remain valid at the  
(standard and reversed)  
minimum power supply  
voltage of 2.0 volt. Using  
the CMOS technology,  
supply voltages from 2.0  
to 5.5 volt has little effect  
on supply current in the  
data retention mode. The  
HY62256A/HY62256A-I  
is suitable for use in low  
voltage operation and  
battery back-up  
application.  
1 of 2  
22/10/97 12:30  

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HY62256ALLP-10 HYNIX

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Standard SRAM, 32KX8, 100ns, CMOS, PDIP28
HY62256ALLP-100 HYNIX

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Standard SRAM, 32KX8, 100ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
HY62256ALLP-12 ETC

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x8 SRAM
HY62256ALLP-55 ETC

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x8 SRAM
HY62256ALLP-55I HYNIX

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Standard SRAM, 32KX8, 55ns, CMOS
HY62256ALLP-70 ETC

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x8 SRAM
HY62256ALLP-70I HYNIX

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Standard SRAM, 32KX8, 70ns, CMOS
HY62256ALLP-85 ETC

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x8 SRAM
HY62256ALLP-85I HYNIX

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Standard SRAM, 32KX8, 85ns, CMOS
HY62256ALLR1 HYNIX

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32Kx8bit CMOS SRAM