5秒后页面跳转
HY62256ALLJ PDF预览

HY62256ALLJ

更新时间: 2022-11-25 11:07:24
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器
页数 文件大小 规格书
14页 822K
描述
32Kx8bit CMOS SRAM

HY62256ALLJ 数据手册

 浏览型号HY62256ALLJ的Datasheet PDF文件第7页浏览型号HY62256ALLJ的Datasheet PDF文件第8页浏览型号HY62256ALLJ的Datasheet PDF文件第9页浏览型号HY62256ALLJ的Datasheet PDF文件第11页浏览型号HY62256ALLJ的Datasheet PDF文件第12页浏览型号HY62256ALLJ的Datasheet PDF文件第13页 
-sram/62256alt1  
http://www.hea.com/hean2/sram/62256alt1.htm  
WRITE CYCLE 2 (/OE Low Fixed)  
Notes (WRlTE CYCLE):  
1. A write occurs during the overlap of a low /CS and a low /WE. A write begins at  
the latest transition among /CS going low and /WE going low: A write ends at  
the earliest transition among /CS going high and /WE going high. tWP is  
measured from the beginning of write to the end of write.  
2. tcw is measured from the later of /CS going low to the end of write .  
3. tAS is measured from the address valid to the beginning of write.  
4. tWR is measured from the end of write to the address change. tWR is applied in  
case a write ends as /CS, or /WE going high.  
5. If /OE and /WE are in the read mode during this period, and the I/O pins are in  
the output low-Z state, input of opposite phase of the output must not be applied  
because bus contention can occur.  
6. If /CS goes low simultaneously with /WE going low, or after /WE going low,  
the outputs remain in high impedance state.  
7. DOUT is the same phase of latest written data in this write cycle.  
8. DOUT is the read data of the new address.  
2 of 3  
22/10/97 12:35  

与HY62256ALLJ相关器件

型号 品牌 描述 获取价格 数据表
HY62256ALLJ-10 HYNIX Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.330 INCH, SOP-28

获取价格

HY62256ALLJ-12 ETC x8 SRAM

获取价格

HY62256ALLJ-120 HYNIX Standard SRAM, 32KX8, 120ns, CMOS, PDSO28, 0.330 INCH, SOP-28

获取价格

HY62256ALLJ-55 ETC x8 SRAM

获取价格

HY62256ALLJ-55I HYNIX Standard SRAM, 32KX8, 55ns, CMOS

获取价格

HY62256ALLJ-70 ETC x8 SRAM

获取价格