Datasheet > HY62256ALLJ

HY62256ALLJ

更新时间： 2022-11-25 11:07:24

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
14页	822K
描述
32Kx8bit CMOS SRAM

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数据手册

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HY62256ALLJ 数据手册

-sram/62256ala1

http://www.hea.com/hean2/sram/62256ala1.htm

AC CHARACTERISTICS

Vcc = 5V(±)10%, TA = 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.) unless otherwise

specified.

-55

-70

-85

# Symbol

Parameter

Unit

Min. Max. Min. Max. Min. Max.

READ CYCLE

1 tRC

2 tAA

3 tACS

Read Cycle Time

Address Access Time

Chip Select Access Time

Output Enable to Output

Valid

4 tOE

Chip Select to Output in

Low Z

5 tCLZ

6 tOLZ

7 tCHZ

8 tOHZ

9 tOH

Output Enable to Output in

Low Z

Chip Deselection to Output

in High Z

Out Disable to Output in

High Z

Output Hold from Address

Change

WRITE CYCLE

10 tWC

Write Cycle Time

Chip Selection to End of

Write

11 tCW

Address Valid to End of

Write

12 tAW

13 tAS

14 tWP

15 tWR

Address Set-up Time

Write Pulse Width

Write Recovery Time

16 tWHZ Write to Output in High Z

17 tDW

18 tDH

Data to Write Time Overlap 25

Data Hold from Write Time 0

Output Active from End of

Write

19 tOW

AC TEST CONDITIONS

TA = 0°C to 70°C (Normal) / -40°C to 85°C (E.T.) unless otherwise specified.

PARAMETER VALUE

Input Pulse Level

Input Rise and Fall Time

0.8V to 2.4V

5ns

Input and Output Timing Reference Levels 1.5V

70/85/100ns

55ns

CL = 100pF + 1TTL Load

CL = 50pF + 1TTL Load

Output Load

3 of 4

22/10/97 12:33

1...4 5 678 9 10...14

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