HY5V52LFP-S

更新时间： 2024-01-03 13:04:40

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
13页	332K
描述
4Banks x 2M x 32bits Synchronous DRAM

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数据手册

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HY5V52LFP-S 数据手册

Preliminary

HY5V52(L)F(P) Series

4Banks x 2M x 32bits Synchronous DRAM

ABSOLUTE MAXIMUM RATING

Parameter

Symbol

Rating

Unit

^oC

Ambient Temperature

0 ~ 70

^oC

Storage Temperature

TSTG

VIN, VOUT

VDD

-55 ~ 125

-1.0 ~ 4.6

Voltage on Any Pin relative to VSS

Voltage on VDD relative to VSS

Voltage on VDDQ relative to VSS

Short Circuit Output Current

Power Dissipation

VDDQ

IOS

Soldering Temperature ^.Time

260 ^.10

^oC ^.Sec

TSOLDER

DC OPERATING CONDITION (TA= 0 to 70^oC )

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

VDD, VDDQ

VIH

Min

3.0

2.0

Typ

3.3

Max

Unit

Note

1, 2

1, 3

3.6

VDDQ+0.3

0.8

VIL

-0.3

Note :

1. All voltages are referenced to VSS = 0V

2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.

3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration

AC OPERATING TEST CONDITION (TA= 0 to 70 ^oC, VDD=3.3±0.3V, VSS=0V)

Parameter

AC Input High/Low Level Voltage

Input Timing Measurement Reference Level Voltage

Input Rise/Fall Time

Output Timing Measurement Reference Level Voltage

Output Load Capacitance for Access Time Measurement

Symbol

VIH / VIL

Vtrip

Value

2.4/0.4

1.4

Unit

Note

tR / tF

Voutref

Rev. 0.1 / June. 2004

1...4 5 678 9 10...13

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