是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 54 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.24 | 风险等级: | 5.84 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 6 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B54 |
JESD-609代码: | e1 | 长度: | 13.5 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 16MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 1.07 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 20 | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
HY5V56DF-8 | HYNIX | Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 13.50 X 8 MM, 0.80 MM PITCH, FBGA-54 |
获取价格 |
|
HY5V56DFP-H | HYNIX | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBG |
获取价格 |
|
HY5V56DFP-P | HYNIX | Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA- |
获取价格 |
|
HY5V56DLF-P | HYNIX | Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 13.50 X 8 MM, 0.80 MM PITCH, FBGA-54 |
获取价格 |
|
HY5V56DLFP-8 | HYNIX | Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA- |
获取价格 |
|
HY5V56DLFP-H | HYNIX | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBG |
获取价格 |