5秒后页面跳转
HY57V641620FLP-6I PDF预览

HY57V641620FLP-6I

更新时间: 2024-12-01 19:59:03
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 139K
描述
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOPII-54

HY57V641620FLP-6I 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.28
访问模式:FOUR BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G54
JESD-609代码:e6长度:22.238 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.194 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:20宽度:10.16 mm
Base Number Matches:1

HY57V641620FLP-6I 数据手册

 浏览型号HY57V641620FLP-6I的Datasheet PDF文件第2页浏览型号HY57V641620FLP-6I的Datasheet PDF文件第3页浏览型号HY57V641620FLP-6I的Datasheet PDF文件第4页浏览型号HY57V641620FLP-6I的Datasheet PDF文件第5页浏览型号HY57V641620FLP-6I的Datasheet PDF文件第6页浏览型号HY57V641620FLP-6I的Datasheet PDF文件第7页 
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O  
Document Title  
4Bank x 1M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Draft Date  
Jan. 2007  
Apr. 2007  
Remark  
0.1  
1.0  
Initial Draft  
Final Version  
Preliminary  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 1.0 / Apr. 2007  
1

与HY57V641620FLP-6I相关器件

型号 品牌 获取价格 描述 数据表
HY57V641620FLP-7 HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLP-H HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLTP-5I HYNIX

获取价格

Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLTP-6 HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLTP-6I HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLTP-7 HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLTP-7I HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLTP-H HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLTP-HI HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FSP-6I HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE