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HY57V641620FLTP-7I PDF预览

HY57V641620FLTP-7I

更新时间: 2024-12-01 15:45:47
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 570K
描述
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

HY57V641620FLTP-7I 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP54,.46,32
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.82访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):143 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
长度:22.238 mm内存密度:67108864 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:54字数:4194304 words
字数代码:4000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP54,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE电源:3.3 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1.194 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.15 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

HY57V641620FLTP-7I 数据手册

 浏览型号HY57V641620FLTP-7I的Datasheet PDF文件第2页浏览型号HY57V641620FLTP-7I的Datasheet PDF文件第3页浏览型号HY57V641620FLTP-7I的Datasheet PDF文件第4页浏览型号HY57V641620FLTP-7I的Datasheet PDF文件第5页浏览型号HY57V641620FLTP-7I的Datasheet PDF文件第6页浏览型号HY57V641620FLTP-7I的Datasheet PDF文件第7页 
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O  
Document Title  
4Bank x 1M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Draft Date  
Jan. 2007  
Apr. 2007  
Remark  
0.1  
1.0  
Initial Draft  
Final Version  
Preliminary  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 1.0 / Apr. 2007  
1

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HY57V641620FLTP-H HYNIX

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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FLTP-HI HYNIX

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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FSP-H HYNIX

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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
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Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FSTP-5I HYNIX

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Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FSTP-6 HYNIX

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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FSTP-6I HYNIX

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暂无描述
HY57V641620FSTP-7 HYNIX

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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
HY57V641620FTP-5 HYNIX

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Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE