Datasheet > HY57V283220T-SI

HY57V283220T-SI

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器光电二极管
页数	文件大小	规格书
14页	292K
描述
Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

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HY57V283220T-SI 数据手册

HY57V283220T-I / HY5V22F-I

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Rating

Unit

Ambient Temperature

-40 ~ 85

-55 ~ 125

-1.0 ~ 4.6

°C

Storage Temperature

TSTG

°C

Voltage on Any Pin relative to VSS

Voltage on VDD relative to VSS

Short Circuit Output Current

Power Dissipation

VIN, VOUT

VDD, VDDQ

IOS

Soldering Temperature ⋅ Time

TSOLDER

260 ⋅ 10

°C ⋅ Sec

Note : Operation at above absolute maximum rating can adversely affect device reliability

DC OPERATING CONDITION (TA=-40 to 85°C)

Parameter

Symbol

Min

Typ.

Max

Unit

Note

Power Supply Voltage

Input high voltage

Input low voltage

VDD, VDDQ

VIH

3.135

2.0

3.3

3.0

3.6

VDDQ + 0.3

0.8

1,2

1,3

VIL

VSSQ - 0.3

Note :

1.All voltages are referenced to VSS = 0V

2.VIH (max) is acceptable 5.6V AC pulse width with ≤3ns of duration with no input clamp diodes

3.VIL (min) is acceptable -2.0V AC pulse width with ≤3ns of duration with no input clamp diodes

AC OPERATING CONDITION (TA=-40 to 85°C, 3.0V ≤VDD ≤3.6V, VSS=0V - Note1)

Parameter

Symbol

Value

Unit

Note

AC input high / low level voltage

VIH / VIL

Vtrip

2.4/0.4

1.4

Input timing measurement reference level voltage

Input rise / fall time

tR / tF

Voutref

Output timing measurement reference level

Output load capacitance for access time measurement

1.4

Note :

1.Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF)

For details, refer to AC/DC output load circuit

Rev. 0.6/Nov. 02

1 2 3 456 7 8...14

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