Datasheet > HY57V283220T-SI

HY57V283220T-SI

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器光电二极管
页数	文件大小	规格书
14页	292K
描述
Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

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HY57V283220T-SI 数据手册

HY57V283220T-I / HY5V22F-I

DC CHARACTERISTICS II (DC operating conditions unless otherwise noted)

Speed

Parameter

Symbol

Test Condition

Unit

Note

-5

-55

-6

-7

-8

-P

Burst length=1, One bank active

Operating Current

IDD1

120

110

100

tRC ≥ tRC(min), IOL=0mA

IDD2P

CKE ≤ VIL(max), tCK = 10ns

CKE ≤ VIL(max), tCK = ∞

Precharge Standby

Current

in power down mode

IDD2PS

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 10ns

Input signals are changed one time during

2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V

IDD2N

Precharge Standby

Current

in non power down mode

CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

IDD2NS

IDD3P

CKE ≤ VIL(max), tCK = 10ns

CKE ≤ VIL(max), tCK = ∞

Active Standby Current

in power down mode

IDD3PS

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 10ns

Input signals are changed one time during

2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V

IDD3N

Active Standby Current

in non power down mode

CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

IDD3NS

CL=3

230

220

200

180

150

130

140

130

140

ttCK ≥ tCK(min), IOL=0mA

Burst Mode Operating

Current

IDD4

IDD5

IDD6

All banks active

CL=2

Auto Refresh Current

Self Refresh Current

170

160

150

140

tRC ≥ tRC(min), All banks active

CKE ≤ 0.2V

0.8

Note :

1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II

3.HY57V283220T(HY5V22F)-5I/55I/6I/7I/8I/PI/SI

4.HY57V283220LT(HY5V22LF)-5I/55I/6I/7I/8I/PI/SI

Rev. 0.6/Nov. 02

1...4 5 678 9 10...14

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