Datasheet > 存储 > DRAM> HY57V283220T-S

HY57V283220T-S

更新时间： 2024-11-01 04:58:03

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
15页	914K
描述
4 Banks x 1M x 32Bit Synchronous DRAM

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

HY57V283220T-S 数据手册

HY57V283220(L)T(P)/ HY5V22(L)F(P)

4 Banks x 1M x 32Bit Synchronous DRAM

Revision History

Revision No.

History

Remark

0.1

0.2

Defined Preliminary Specification

1) Modified FBGA Ball Configuration Typo.

2) Changed Functional Block Diagram from A10 to A11.

3) Changed VDD min from 3.0V to 3.135V.

4) Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.

5) Insert tAC2 Value.

6) Insdrt tRAS & CLK Value.

0.3

0.4

0.5

0.6

0.7

Defined IDD Spec.

Delited Preliminary.

Changed IDD Spec.

133MHz Speed Added

Changed FBGA Package Size from 11x13 to 8x13.

1) Changed VDD min from 3.135V to 3.0V.

2) Changed VIL min from VSSQ-0.3V to -0.3V.

0.8

0.9

Modified of size erra. (Page15)

(Equation : 13.00 ± 10 -> 13.00 ± 0.10)

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.9 / July 2004

12 3 4 5 6 7...15

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
HY57V283220T-SI	HYNIX	获取价格	Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
HY57V28420ALT	ETC	获取价格	32Mx4\|3.3V\|4K\|6/K/H/8/P/S\|SDR SDRAM - 128M
HY57V28420ALT-10	ETC	获取价格	x4 SDRAM
HY57V28420ALT-6	ETC	获取价格	x4 SDRAM
HY57V28420ALT-8	ETC	获取价格	x4 SDRAM
HY57V28420ALT-H	ETC	获取价格	x4 SDRAM
HY57V28420ALT-K	ETC	获取价格	x4 SDRAM
HY57V28420ALT-P	ETC	获取价格	x4 SDRAM
HY57V28420ALT-S	ETC	获取价格	x4 SDRAM
HY57V28420AT	ETC	获取价格	32Mx4\|3.3V\|4K\|6/K/H/8/P/S\|SDR SDRAM - 128M