Datasheet > HY51V65164ALTC60

HY51V65164ALTC60

更新时间： 2024-01-19 01:16:43

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
10页	118K
描述
x16 EDO Page Mode DRAM

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中文翻译

获取价格

数据手册

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HY51V65164ALTC60 数据手册

HY51V64164A,HY51V65164A

4Mx16, Extended Data Out mode

2nd Generation

DESCRIPTION

This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS

DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

design allow this device to achieve high performance and low power dissipation. Optional features are access time(50 or

60ns) and refresh cycle(8K ref. or 4K ref.) and power consumption (Normal or Low power with self refresh). Hyundai’s

advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and

high reliability.

FEATURES

Ÿ Extended data out operation

Ÿ JEDEC standard pinout

Ÿ Read-modify-write capability

50-pin plastic TSOP-II (400mil)

Ÿ Multi-bit parallel test capability

Ÿ Single power supply of 3.3 ± 0.3V

Ÿ LVTTL(3.3V) compatible inputs and outputs

Ÿ Early write or output enable controlled write

Ÿ /CAS-before-/RAS, /RAS-only, Hidden and

Self refresh capability

Ÿ Max. Active power dissipation

Ÿ Fast access time and cycle time

Speed

8K refresh

4K refresh

504mW

Speed

tRAC

50ns

60ns

tCAC

13ns

15ns

tHPC

20ns

25ns

396mW

324mW

432mW

Ÿ Refresh cycles

Part number

HY51V64164A¹⁾

HY51V65164A²⁾

Refresh

Normal

L-part

64ms

128ms

1) Normal read / write, /RAS only refresh : 8K cycles / 64ms

/CAS-before-/RAS, Hidden refresh : 4K cycles / 64ms

2) Normal read / write, /RAS only refresh : 4K cycles / 64ms

/CAS-before-/RAS, Hidden refresh

: 4K cycles / 64ms

ORDERING INFORMATION

Part Name

HY51V64164ATC

HY51V64164ALTC

HY51V64164ASLTC

HY51V65164ATC

HY51V65164ALTC

Refresh

Power

Package

50Pin TSOP-II

L-part

*SL-part

L-part

HY51V65164ASLTC

*SL-part

*SL : Self refresh with low power.

This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of

circuits described. No patent licences are implied

Hyundai Semiconductor

Rev.12/Sep.98

12 3 4 5 6 7...10

中文翻译

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与HY51V65164ALTC60相关器件

型号	品牌	获取价格	描述	数据表
HY51V65164ALTC-60	HYNIX	获取价格	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
HY51V65164ASLTC50	ETC	获取价格	x16 EDO Page Mode DRAM
HY51V65164ASLTC-50	HYNIX	获取价格	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
HY51V65164ASLTC60	ETC	获取价格	x16 EDO Page Mode DRAM
HY51V65164ASLTC-60	HYNIX	获取价格	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
HY51V65164ATC50	ETC	获取价格	x16 EDO Page Mode DRAM
HY51V65164ATC-50	HYNIX	获取价格	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
HY51V65164ATC60	ETC	获取价格	x16 EDO Page Mode DRAM
HY51V65164ATC-60	HYNIX	获取价格	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
HY51V65164JC-50	HYNIX	获取价格	EDO DRAM, 8MX8, CMOS, PDSO50, 0.400 INCH, SOJ-50

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