Datasheet > HY51V65160ATC-70

HY51V65160ATC-70

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器光电二极管
页数	文件大小	规格书
9页	100K
描述
Fast Page DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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中文翻译

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数据手册

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HY51V65160ATC-70 数据手册

HY51V64160A,HY51V65160A

4Mx16, Fast Page mode

2nd Generation

Preliminary

DESCRIPTION

This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs.

Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

this device to achieve high performance and low power dissipation. Optional features are access time(60 or 70ns) and

refresh cycle(8K ref. or 4K ref.) and power consumption (Normal or Low power with self refresh). Hyundai’s advanced

circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high

reliability.

FEATURES

Ÿ Fast page mode operation

Ÿ JEDEC standard pinout

Ÿ Read-modify-write capability

50-pin plastic TSOP-II (400mil)

Ÿ Multi-bit parallel test capability

Ÿ Single power supply of 3.3 ± 0.3V

Ÿ LVTTL(3.3V) compatible inputs and outputs

Ÿ Early write or output enable controlled write

Ÿ /CAS-before-/RAS, /RAS-only, Hidden and

Self refresh capability

Ÿ Max. Active power dissipation

Ÿ Fast access time and cycle time

Speed

8K refresh

4K refresh

504mW

Speed

tRAC

50ns

60ns

tCAC

13ns

15ns

tPC

35ns

40ns

396mW

324mW

432mW

Ÿ Refresh cycles

Part number

HY51V64160A¹⁾

HY51V65160A²⁾

Refresh

Normal

L-part

64ms

128ms

1) Normal read / write, /RAS only refresh : 8K cycles / 64ms

/CAS-before-/RAS, Hidden refresh : 4K cycles / 64ms

2) Normal read / write, /RAS only refresh : 4K cycles / 64ms

/CAS-before-/RAS, Hidden refresh

: 4K cycles / 64ms

ORDERING INFORMATION

Part Name

HY51V64160ATC

HY51V64160ALTC

HY51V64160ASLTC

HY51V65160ATC

HY51V65160ALTC

Refresh

Power

Package

50Pin TSOP-II

L-part

*SL-part

L-part

HY51V65160ASLTC

*SL-part

*SL : Self refresh with low power.

This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of

circuits described. No patent licences are implied

Hyundai Semiconductor

Rev.01 / 9802

12 3 4 5 6 7...9

中文翻译

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与HY51V65160ATC-70相关器件

型号	品牌	获取价格	描述	数据表
HY51V65160JC-50	HYNIX	获取价格	EDO DRAM, 8MX8, CMOS, PDSO50, 0.400 INCH, SOJ-50
HY51V65160LTC60	ETC	获取价格	x16 Fast Page Mode DRAM
HY51V65160LTC-60	HYNIX	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
HY51V65160LTC70	ETC	获取价格	x16 Fast Page Mode DRAM
HY51V65160LTC-70	HYNIX	获取价格	Fast Page DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
HY51V65160SLRC-60	HYNIX	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50
HY51V65160SLRC-70	HYNIX	获取价格	Fast Page DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50
HY51V65160SLTC60	ETC	获取价格	x16 Fast Page Mode DRAM
HY51V65160SLTC-60	HYNIX	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
HY51V65160SLTC70	ETC	获取价格	x16 Fast Page Mode DRAM

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