Datasheet > HY51V18163HGJ-7

HY51V18163HGJ-7

更新时间： 2024-11-03 22:14:15

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
12页	109K
描述
1M x 16Bit EDO DRAM

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中文翻译

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数据手册

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HY51V18163HGJ-7 数据手册

HY51V(S)18163HG/HGL

1M x 16Bit EDO DRAM

PRELIMINARY

DESCRIPTION

The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.

HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utiliz-

ing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page-

Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be

packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system

bit densities and is compatible with widely available automated testing and insertion equipment.

FEATURES

•

Extended Data Out Mode capability

Read-modify-write capability

Multi-bit parallel test capability

TTL(3.3V) compatible inputs and outputs

/RAS only, CAS-before-/RAS, Hidden and self

refresh(L-version) capability

•

JEDEC standard pinout

42pin plastic SOJ / 44(50)pin TSOP-II (400mil)

Single power supply of 3.3V +/- 0.3V

Battery back up operation(L-version)

2CAS byte control

•

Fast access time and cycle time

Part No

tRAC

tCAC

tRC

tHPC

HY51V(S)18163HG/HGL-5

HY51V(S)18163HG/HGL-6

HY51V(S)18163HG/HGL-7

50ns

60ns

70ns

13ns

15ns

18ns

84ns

104ns

124ns

20ns

25ns

30ns

•

Power dissipation

•

Refresh cycle

Part No

50ns

60ns

70ns

Ref

Normal

L-part

Active

684mW

612mW

540mW

HY51V18163HG

HY51V18163HGL

16ms

7.2mW(CMOS level Max)

0.83mW (L-version : Max)

128ms

Standby

ORDERING INFORMATION

Part Number

Access Time

Package

HY51V(S)18163HGJ/HG(L)J-5

HY51V(S)18163HGJ/HG(L)J-6

HY51V(S)18163HGJ/HG(L)J-7

50ns

60ns

70ns

400mil 42pin SOJ

HY51V(S)18163HGT/HG(L)T-5

HY51V(S)18163HGT/HG(L)T-6

HY51V(S)18163HGT/HG(L)T-7

50ns

60ns

70ns

400mil 44(50)pin TSOP-II

(S) : Self refresh,

(L) : Low power

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.0.1/Apr.01

12 3 4 5 6 7...12

中文翻译

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与HY51V18163HGJ-7相关器件

型号	品牌	获取价格	描述	数据表
HY51V18163HGT	HYNIX	获取价格	1M x 16Bit EDO DRAM
HY51V18163HGT-5	HYNIX	获取价格	1M x 16Bit EDO DRAM
HY51V18163HGT-6	HYNIX	获取价格	1M x 16Bit EDO DRAM
HY51V18163HGT-7	HYNIX	获取价格	1M x 16Bit EDO DRAM
HY51V18164BJC-60	HYNIX	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
HY51V18164BJC-70	HYNIX	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
HY51V18164BJC-80	HYNIX	获取价格	EDO DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
HY51V18164BLTC-80	HYNIX	获取价格	EDO DRAM, 1MX16, 80ns, CMOS, 0.400 INCH, TSOP2
HY51V18164BRC-60	HYNIX	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50/44
HY51V18164BRC-70	HYNIX	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50/44

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