Datasheet > HY51V16164CJC-70

HY51V16164CJC-70

更新时间： 2024-11-02 23:57:07

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
8页	114K
描述
x16 EDO Page Mode DRAM

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中文翻译

获取价格

数据手册

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HY51V16164CJC-70 数据手册

HY51V18164C,HY51V16164C

1Mx16, Extended Data Out mode

DESCRIPTION

This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS

DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

design allow this device to achieve high performance and low power dissipation. Optional features are access time(60, 70

or 80ns) and refresh cycle(1K ref. or 4K ref.) and power consumption (Normal or Low power with self refresh). Hyundai’s

advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and

high reliability.

FEATURES

Ÿ Extended data out operation

Ÿ JEDEC standard pinout

Ÿ Read-modify-write Capability

Ÿ LVTTL compatible inputs and outputs

Ÿ /CAS-before-/RAS, /RAS-only, Hidden and

Self refresh capability

Ÿ 42-pin Plastic SOJ (400mil)

44/50-pin plastic TSOP-II (400mil)

Ÿ Single power supply of 3.3V ± 0.3V

Ÿ Early write or output enable controlled write

Ÿ Max. Active power dissipation

Ÿ Fast access time and cycle time

Speed

1K refresh

576mW

4K refresh

360mW

Speed

tRAC

60ns

70ns

80ns

tCAC

15ns

20ns

tHPC

25ns

30ns

35ns

540mW

324mW

504mW

288mW

Ÿ Refresh cycle

Part number

HY51V18164C

HY51V16164C

Refresh

Normal

SL-part

16ms

64ms

256ms

ORDERING INFORMATION

Part Name

HY51V18164CJC

HY51V18164CSLJC

HY51V18164CTC

HY51V18164CSLTC

HY51V16164CJC

HY51V16164CSLJC

HY51V16164CTC

HY51V16164CSLTC

Refresh

Power

SL-part

Package

42Pin SOJ

44/50Pin TSOP-II

42Pin SOJ

44/50Pin TSOP-II

*SL : Low power with self refresh

This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of

circuits described. No patent licences are implied

Hyundai Semiconductor

Rev.00 / Sep.97

12 3 4 5 6 7 8

中文翻译

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与HY51V16164CJC-70相关器件

型号	品牌	获取价格	描述	数据表
HY51V16164CJC-80	HYNIX	获取价格	EDO DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
HY51V16164CRC-70	HYNIX	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50/44
HY51V16164CRC-80	HYNIX	获取价格	EDO DRAM, 1MX16, 80ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50/44
HY51V16164CSLJC-60	ETC	获取价格	x16 EDO Page Mode DRAM
HY51V16164CSLJC-70	HYNIX	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
HY51V16164CSLJC-80	ETC	获取价格	x16 EDO Page Mode DRAM
HY51V16164CSLRC-70	HYNIX	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50/44
HY51V16164CSLRC-80	HYNIX	获取价格	EDO DRAM, 1MX16, 80ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50/44
HY51V16164CSLTC-60	HYNIX	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
HY51V16164CSLTC-70	ETC	获取价格	x16 EDO Page Mode DRAM

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