Datasheet > HY51S16400HG(HGL)

HY51S16400HG(HGL)

更新时间： 2024-11-01 23:57:07

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
11页	96K
描述
4Mx4\|3.3V\|4K\|5/6/7\|FP/EDO DRAM - 16M

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HY51V(S)16400HG/HGL

4M x 4Bit Fast Page DRAM

PRELIMINARY

ESCRIPTION

The HY51V(S)16400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.

HY51V(S)16400HG/HGL has realized higher density, higher performance and various functions by utiliz-

ing advanced CMOS process technology. The HY51V(S)16400HG/HGL offers Fast Page Mode as a high

speed access mode. Multiplexed address inputs permit the HY51V(S)16400HG/HGL to be packaged in

standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densi-

ties and is compatible with widely available automated testing and insertion equipment.

System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability

with high performance logic families such as Schottky TTL.

FEATURES

•

Fast Page Mode capability

Read-modify-write capability

Multi-bit parallel test capability

TTL(3.3V) compatible inputs and outputs

/RAS only, CAS-before-/RAS, Hidden and self

refresh(L-version) capability

•

JEDEC standard pinout

24(26)pin plastic SOJ/TSOP-II(300mil)

Single power supply of 3.3V +/- 0.3V

Battery back up operation(L-version)

•

Fast access time and cycle time

Part No

tRAC

tCAC

tRC

tPC

HY51V(S)16400HG/HGL-5

HY51V(S)16400HG/HGL-6

HY51V(S)16400HG/HGL-7

50ns

60ns

70ns

13ns

15ns

18ns

90ns

110ns

130ns

35ns

40ns

45ns

•

Power dissipation

•

Refresh cycle

Part No

50ns

60ns

70ns

Ref

Normal

L-part

Active

324mW

288mW

252mW

HY51V16400HG

HY51V16400HGL

64ms

7.2mW(CMOS level Max)

0.36mW (L-version : Max)

128ms

Standby

ORDERING INFORMATION

Part Number

Access Time

Package

HY51V(S)16400HGJ/HG(L)J-5

HY51V(S)16400HGJ/HG(L)J-6

HY51V(S)16400HGJ/HG(L)J-7

50ns

60ns

70ns

300mil 24(26)pin SOJ

HY51V(S)16400HGT/HG(L)T-5

HY51V(S)16400HGT/HG(L)T-6

HY51V(S)16400HGT/HG(L)T-7

50ns

60ns

70ns

300mil 24(26)pin TSOP-II

(S) : Self refresh,

(L) : Low power

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.0.1/Apr.01

12 3 4 5 6 7...11

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与HY51S16400HG(HGL)相关器件

型号	品牌	获取价格	描述	数据表
HY51S16403HG(HGL)	ETC	获取价格	4Mx4\|3.3V\|4K\|5/6/7\|FP/EDO DRAM - 16M
HY51S17400HG(HGL)	ETC	获取价格	4Mx4\|3.3V\|2K\|5/6/7\|FP/EDO DRAM - 16M
HY51S17403HG(HGL)	ETC	获取价格	4Mx4\|3.3V\|2K\|5/6\|FP/EDO DRAM - 16M
HY51S18160HG(HGL)	ETC	获取价格	1Mx16\|3.3V\|1K\|5/6\|FP/EDO DRAM - 16M
HY51S18163HG(HGL)	ETC	获取价格	1Mx16\|3.3V\|1K\|5/6\|FP/EDO DRAM - 16M
HY51S64403HG(HGL)	ETC	获取价格	16Mx4\|3.3V\|8K\|45\|FP/EDO DRAM - 64M
HY51S64803HG(HGL)	ETC	获取价格	8Mx8\|3.3V\|8K\|45\|FP/EDO DRAM - 64M
HY51S65163HG(HGL)	ETC	获取价格	4Mx16\|3.3V\|4K\|45\|FP/EDO DRAM - 64M
HY51S65173HG(HGL)	ETC	获取价格	4Mx16\|3.3V\|4K\|45\|FP/EDO DRAM - 64M
HY51S65403HG(HGL)	ETC	获取价格	16Mx4\|3.3V\|4K\|45\|FP/EDO DRAM - 64M

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