HY29DL163TT-80

更新时间： 2024-01-29 17:06:07

品牌	Logo	应用领域
海力士 - HYNIX		闪存
页数	文件大小	规格书
48页	548K
描述
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HY29DL163TT-80 数据手册

HY29DL162/HY29DL163

16 Megabit (2M x 8/1M x16) Low Voltage,

Dual Bank, Simultaneous Read/Write Flash Memory

KEY FEATURES

n Data# Polling and Toggle Bits

n Single Power Supply Operation

− Read, program, and erase operations

from 2.7 to 3.6 V

− Provide software confirmation of completion

of program or erase operations

n Ready/Busy# Pin

− Ideal for battery-powered applications

n Simultaneous Read/Write Operations

− Host system can program or erase in one

bank while simultaneously reading from any

sector in the other bank with zero latency

between read and write operations

n High Performance

− Provides hardware confirmation of

completion of program or erase operations

n Erase Suspend

− Suspends an erase operation to allow

programming data to or reading data from

a sector in the same bank

− Erase Resume can then be invoked to

complete the suspended erasure

n Hardware Reset Pin (RESET#) Resets the

Device to Reading Array Data

− 70 and 80 ns access time versions with

30pF load

− 90 and 120 ns access time versions with

100pF load

n WP#/ACC Input Pin

n Ultra Low Power Consumption (Typical

Values)

− Write protect (WP#) function allows

hardware protection of two outermost boot

sectors, regardless of sector protect status

− Acceleration (ACC) function provides

accelerated program times

− Automatic sleep mode current: 200 nA

− Standby mode current: 200 nA

− Read current: 10 mA (at 5 MHz)

− Program/erase current: 15 mA

n Boot-Block Sector Architecture with 39

Sectors in Two Banks for Fast In-System

Code Changes

n Fast Program and Erase Times

− Sector erase time: 0.5 sec typical

− Byte/Word program time utilizing

Acceleration function: 10 µs typical

n Space Efficient Packaging

n Secured Sector: An Extra 64 Kbyte Sector

that Can Be:

− 48-pin TSOP and 48-ball FBGA packages

− Factory locked and identifiable: 16 bytes

available for a secure, random factory-

programmed Electronic Serial Number

− Customer lockable: Can be read, program-

med, or erased just like other sectors

n Flexible Sector Architecture

− Sector Protection allows locking of a

sector or sectors to prevent program or

erase operations within that sector

− Temporary Sector Unprotect allows

changes in locked sectors (requires high

voltage on RESET# pin)

n Automatic Erase Algorithm Erases Any

Combination of Sectors or the Entire Chip

n Automatic Program Algorithm Writes and

Verifies Data at Specified Addresses

n Compliant with Common Flash Memory

Interface (CFI) Specification

LOGIC DIAGRAM

A[19:0]

CE#

DQ[7:0]

DQ[14:8]

DQ[15]/A[-1]

WP#/ACC

RY/BY#

OE#

W E#

RESET#

BYTE#

n Minimum 100,000 Write Cycles per Sector

(1,000,000 cycles Typical)

n Compatible with JEDEC Standards

− Pinout and software compatible with

single-power supply Flash devices

− Superior inadvertent write protection

Preliminary

Revision 1.3, June 2001

12 3 4 5 6 7...48

中文翻译

下载PDF

与HY29DL163TT-80相关器件

型号	品牌	获取价格	描述	数据表
HY29DL163TT-80I	HYNIX	获取价格	16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DL163TT-90	HYNIX	获取价格	16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DL163TT-90I	HYNIX	获取价格	16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DS162	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS162BF-12	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS162BF-12I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS162BF-13	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS162BF-13I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS162BT-12	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS162BT-12I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M

与HY29DL163TT-80相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

4
PMOS管背靠背连接：串联还是并联？
2024-06-28

4
高压电解电容的分类与选型策略
2024-06-28

5
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

9

产品中心

服务支持

精选活动

关于我们

帮助中心

HY29DL163TT-80

HY29DL163TT-80 数据手册

与HY29DL163TT-80相关器件

与HY29DL163TT-80相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HY29DL163TT-80

HY29DL163TT-80 数据手册

与HY29DL163TT-80相关器件

与HY29DL163TT-80相关文章

您还可以找

您在本页遇到什么问题？