Datasheet > 存储 > 闪存> HY29DS163BF-12

HY29DS163BF-12

更新时间： 2024-02-16 01:54:15

品牌	Logo	应用领域
海力士 - HYNIX		闪存存储内存集成电路
页数	文件大小	规格书
48页	546K
描述
16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HY29DS163BF-12 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	8 X 9 MM, FBGA-48
针数：	48	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.92	最长访问时间：	120 ns
备用内存宽度：	8	启动块：	BOTTOM
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	YES	JESD-30 代码：	R-PBGA-B48
JESD-609代码：	e0	长度：	9 mm
内存密度：	16777216 bit	内存集成电路类型：	FLASH
内存宽度：	16	功能数量：	1
部门数/规模：	8,31	端子数量：	48
字数：	1048576 words	字数代码：	1000000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	1MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装等效代码：	BGA48,6X8,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	2 V
编程电压：	1.8 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	1.2 mm
部门规模：	8K,64K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.024 mA
最大供电电压 (Vsup)：	2.2 V	最小供电电压 (Vsup)：	1.8 V
标称供电电压 (Vsup)：	2 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	切换位：	YES
类型：	NOR TYPE	宽度：	8 mm
Base Number Matches：	1

HY29DS163BF-12 数据手册

HY29DS162/HY29DS163

16 Megabit (2M x 8/1M x 16) Super-Low Voltage,

Dual Bank, Simultaneous Read/Write, Flash Memory

KEY FEATURES

n Data# Polling and Toggle Bits

n Single Power Supply Operation

− Read, program, and erase operations

from 1.8 to 2.2 V (2.0V ± 10%)

− Provide software confirmation of completion

of program or erase operations

n Ready/Busy# Pin

− Ideal for battery-powered applications

n Simultaneous Read/Write Operations

− Host system can program or erase in one

bank while simultaneously reading from any

sector in the other bank with zero latency

between read and write operations

− Provides hardware confirmation of

completion of program or erase operations

n Erase Suspend

− Suspends an erase operation to allow

programming data to or reading data from

a sector in the same bank

n High Performance

− Erase Resume can then be invoked to

complete the suspended erasure

n Hardware Reset Pin (RESET#) Resets the

Device to Reading Array Data

− 120 and 130 ns access time versions with

± 10% power supply and 30pF load

n Ultra Low Power Consumption (Typical

Values)

n WP#/ACC Input Pin

− Automatic sleep mode current: 200 nA

− Write protect (WP#) function allows

hardware protection of two outermost boot

sectors, regardless of sector protect status

− Acceleration (ACC) function provides

accelerated program times

− Standby mode current: 200 nA

− Read current: 5 mA (at 5 MHz)

− Program/erase current: 15 mA

n Boot-Block Sector Architecture with 39

Sectors in Two Banks for Fast In-System

Code Changes

n Fast Program and Erase Times

− Sector erase time: 1 sec typical

− Byte/Word program time utilizing

Acceleration function: 13 µs typical

n Space Efficient Packaging

n Secured Sector: An Extra 64 Kbyte Sector

that Can Be:

− Factory locked and identifiable: 16 bytes

available for a secure, random factory-

programmed Electronic Serial Number

− Customer lockable: Can be read, program-

med, or erased just like other sectors

n Flexible Sector Architecture

− 48-pin TSOP and 48-ball FBGA packages

LOGIC DIAGRAM

− Sector Protection allows locking of a

sector or sectors to prevent program or

erase operations within that sector

− Temporary Sector Unprotect allows

changes in locked sectors (requires high

voltage on RESET# pin)

A[19:0]

CE#

DQ[7:0]

n Automatic Erase Algorithm Erases Any

Combination of Sectors or the Entire Chip

n Automatic Program Algorithm Writes and

Verifies Data at Specified Addresses

n Compliant with Common Flash Memory

Interface (CFI) Specification

n Minimum 100,000 Write Cycles per Sector

(1,000,000 cycles Typical)

n Compatible with JEDEC Standards

− Pinout and software compatible with

single-power supply Flash devices

− Superior inadvertent write protection

DQ[14:8]

DQ[15]/A[-1]

WP#/ACC

RY/BY#

OE#

W E#

RESET#

BYTE#

Preliminary

Revision 1.3, April 2001

12 3 4 5 6 7...48

中文翻译

下载PDF

与HY29DS163BF-12相关器件

型号	品牌	获取价格	描述	数据表
HY29DS163BF-12I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163BF-13	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163BF-13I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163BT-12	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163BT-12I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163BT-13	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163BT-13I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163TF-12	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163TF-12I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163TF-13	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M

与HY29DS163BF-12相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

8
PMOS管背靠背连接：串联还是并联？
2024-06-28

7
高压电解电容的分类与选型策略
2024-06-28

8
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

14

产品中心

服务支持

精选活动

关于我们

帮助中心

HY29DS163BF-12

HY29DS163BF-12 技术参数

HY29DS163BF-12 数据手册

与HY29DS163BF-12相关器件

与HY29DS163BF-12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HY29DS163BF-12

HY29DS163BF-12 技术参数

HY29DS163BF-12 数据手册

与HY29DS163BF-12相关器件

与HY29DS163BF-12相关文章

您还可以找

您在本页遇到什么问题？