Datasheet > HY19P03V

HY19P03V

更新时间： 2022-06-24 15:41:53

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
11页	1269K
描述
P-Channel Enhancement Mode MOSFET

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数据手册

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HY19P03V 数据手册

HY19P03 D/U/V

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (Tc=25°C Unless Otherwise Noted)

VDSS

VGSS

Drain-Source Voltage

-30

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Drain Current-Continuous

150

°C

TSTG

-55 to 150

-90

Tc=25°C

Mounted on Large Heat Sink

Tc=25°C

Tc=100°C

Tc=25°C

Tc=100°C

-360

-90

IDM

Pulsed Drain Current *

Continuous Drain Current

-59

Maximum Power Dissipation

R_JC

R_JA

EAS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient **

SinglePulsed-Avalanche Energy ***

2.5

°C/W

110

358***

L=0.3mH

Note:

Repetitive rating; pulse width limited by max junction temperature.

Surface mounted on FR-4 board.

***

Limited by TJmax , starting TJ=25°C , L = 0.3mH, RG= 25Ω, VGS=10V.

Electrical Characteristics(Tc =25°C Unless Otherwise Noted)

HY19P03

Symbol

Parameter

Test Conditions

Unit

Min

Typ

Max

Static Characteristics

V_GS=0V,I_DS=250uA

BVDSS

Drain-Source Breakdown Voltage

-30

-1

VDS=-30V, V_GS=0V

TJ=55°C

IDSS

Drain-to-Source Leakage Current

-10

-3.0

±100

VDS=VGS, I_DS=250uA

VGS=±20V,VDS=0V

V_GS=-10V,I_D= -45A

V_GS=-4.5V,I_D= -45A

VGS(th)

IGSS

Gate Threshold Voltage

-1.0

-1.7

Gate-Source Leakage Current

mΩ

4.8

6.4

RDS(ON)*

Drain-Source On-state Resistance

Diode Characteristics

Diode Forward Voltage

ISD= -45A,VGS=0V

-0.82

-1.3

VSD*

trr

Reverse Recovery Time

Reverse Recovery Charge

ISD= -45A,dI/dt=100A/us

Qrr

V1.1

ZZZꢀK\PH[DꢀFRP

123 4 5 6 7...11

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