Datasheet > HY19P03V

HY19P03V

更新时间： 2024-01-13 19:10:27

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
11页	1269K
描述
P-Channel Enhancement Mode MOSFET

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中文翻译

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HY19P03V 数据手册

HY19P03 D/U/V

Typical Operating Characteristics(Cont.)

Figure 7: On-Resistance vs. Temperature

Figure 8: Source-Drain Diode Forward

Tj-Junction Temperature (℃)

-VSD-Source-Drain Voltage(V)

Figure 9: Capacitance Characteristics

Figure 10: Gate Charge Characteristics

-VDS-Drain-Source Voltage (V)

QG-Gate Charge (nC)

ZZZꢀK\PH[DꢀFRP

V1.1

1 2 3 456 7 8...11

中文翻译

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型号	品牌	获取价格	描述	数据表
HY1-9V	PANASONIC	获取价格	Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY-1A	PERKINELMER	获取价格	Thyratrons
HY1A112DC	ETC	获取价格	High Capacity Relay HY
HY1A1230AC	ETC	获取价格	High Capacity Relay HY
HY1N60B	HY	获取价格	Transistor
HY1N60D	HY	获取价格	600V / 1.0A N-Channel Enhancement Mode MOSFET
HY1Z-1.5V	PANASONIC	获取价格	Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY1Z-12V	PANASONIC	获取价格	Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY1Z-24	PANASONIC	获取价格	Electromechanical Relay, SPDT, Latched, 28.8VDC (Coil), 1A (Contact), 60VDC (Contact), Ran
HY1Z-24V	PANASONIC	获取价格	Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW