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HY1910V PDF预览

HY1910V

更新时间: 2024-11-13 02:51:51
品牌 Logo 应用领域
华羿微 - HUAYI /
页数 文件大小 规格书
11页 2453K
描述
N-Channel Enhancement Mode MOSFET

HY1910V 数据手册

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HY1910D/U/V  
N-Channel Enhancement Mode MOSFET  
Feature  
Pin Description  
z
100V/67A  
RDS(ON)= 10mΩ(typ.) @VGS = 10V  
RDS(ON)= 12mΩ(typ.) @VGS = 4.5V  
z
z
z
100% Avalanche Tested  
Reliable and Rugged  
D
Halogen Free and Green Devices Available  
(RoHS Compliant)  
G
TO-252-2L  
TO-251-3L  
TO-251-3S  
Applications  
z
Power Management for DC/DC  
N-Channel MOSFET  
Ordering and Marking Information  
Package Code  
D: TO-252-2L  
U: TO-251-3L V:TO-251-3S  
D
U
V
HY1910  
HY1910  
HY1910  
YYXXXJWW G  
Date Code  
YYXXX WW  
Assembly Material  
G:Halogen Free  
YYXXXJWW G YYXXXJWW G  
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate  
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-  
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.  
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed  
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).  
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to  
this pr-oduct and/or to this document at any time without notice.  
V1.1  
ZZZꢀK\PH[DꢀFRP  
1

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