Datasheet > HY1906V

HY1906V

更新时间： 2024-02-05 22:11:43

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
12页	962K
描述
N-Channel Enhancement Mode MOSFET

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中文翻译

获取价格

数据手册

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HY1906V 数据手册

HY1906D/U/V

N-Channel Enhancement Mode MOSFET

Features

Pin Description

•

60V/70A,

_DS(ON)=6.3 m(typ.) @ V_GS=10V

•

Avalanche Rated

Reliable and Rugged

Lead Free and GreenDevicesAvailable

(RoHS Compliant)

TO-251-3L

TO-251-3S

TO-252-2L

Applications



Power Management for Inverter Systems.

N-ChannelMOSFET

Ordering and Marking Information

Package Code

D : TO-252-2L

S : TO-251-3S

U : TO-251-3L

HY1906 HY1906 HY1906

Assembly Material

G : Lead Free Device

Date Code

YYXXX WW

YYXXXJWW G YYXXXJWW G YYXXXJWW G

Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate

Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-

Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed

900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to

this pr-oduct and/or to this document at any time without notice.

www.hymexa.com

V1.1

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中文翻译

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