Datasheet > HWF1681RA

HWF1681RA

更新时间： 2024-11-05 03:43:11

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汉威 - HW		/
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描述
L-Band GaAs Power FET

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HWF1681RA 数据手册

HWF1681RA

L-Band GaAs Power FET

June 2005 V3

•

RA Package (Ceramic)

Symbol

Parameters

Saturated Drain Current

Pinch-off Voltage

Conditions

V_DS=3V, V_GS=0V

V_DS=3V, I_DS=60 mA

V_DS=3V, I_DS=600 mA

Channel to Case

V_DS=10V

Units

Min.

Typ.

1200

-2.0

600

Max.

I_DSS

900

1600

V_P

g_m

-3.5

-1.5

Transconductance

R_th

Thermal Resistance

Output Power @1 dB Gain

Linear Power Gain

C/W

33.5

P_1dB

dBm

34.5

G_L

I_DS=0.5I_DSS

f=2.4 GHz

PAE

Power-added Efficiency (P_out= P_1dB

)

Third-order Intercept Point^[3]

dBm

IP₃

Electrical Specifications at 25

[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP₃

Hexawave Inc. 2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw All specifications are subject to change without notice.

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