Datasheet > HWF1687RA

HWF1687RA

更新时间： 2024-11-06 03:43:11

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描述
L-Band GaAs Power FET

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HWF1687RA 数据手册

HWF1687RA

L-Band GaAs Power FET

June 2005 V3

Outline Dimensions

Features

Output Power: P_1dB=31.5 dBm (typ.)

High Gain: G_L=16 dB (typ.)

High Efficiency: PAE =45% (typ.)

High Linearity: IP₃=46 dBm (typ.)

Class A or Class AB Operation

Low Cost

•

Description

The HWF1687RA is a medium power GaAs MESFET

designed for various RF and Microwave applications.

It is presently offered in a low cost, surface-mountable

ceramic package.

Absolute Maximum Ratings

[1]

V_DS

V_GS

I_D

Drain to Source Voltage

Gate to Source Voltage

Drain Current

+15V

-5V

RA Package (Ceramic)

I_DSS

I_G

Gate Current

3 mA

T_CH

Channel Temperature

175 C

T_STGStorage Temperature

-65 to +175 C

[2]

Power Dissipation

6 W

P_T

[1] Hexawave recommends that the quiescent

drain-source operating voltage (V_DS) should not exceed

10 Volts.

[2] Mounted on an infinite heat sink.

Electrical Specification at 25 C

Symbol

Parameters

Conditions

Units

Min.

Typ.

Max.

I_DSS

Saturated Drain Current

Pinch-off Voltage

V_DS=3V, V_GS=0V

V_DS=3V, I_DS=30 mA

V_DS=3V, I_DS=300 mA

Channel to Case

V_DS=10V

500

600

-2.0

300

900

V_P

g_m

-3.5

-1.5

Transconductance

R_th

Thermal Resistance

C/W

30.5

P_1dB

Output Power @1dB Gain

Linear Power Gain

dBm

31.5

G_L

I_DS=0.5I_DSS

PAE

Power-added Efficiency (P_out= P_1dB

)

Third-order Intercept Point^[3]

f=2.4 GHz

dBm

IP₃

[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP₃

Hexawave Inc. 2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw All specifications are subject to change without notice.

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