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HV731JTTPD913J PDF预览

HV731JTTPD913J

更新时间: 2024-11-12 21:07:47
品牌 Logo 应用领域
大兴电工 - KOA 电阻器
页数 文件大小 规格书
1页 319K
描述
Fixed Resistor, Metal Glaze/thick Film, 0.1W, 91000ohm, 350V, 5% +/-Tol, 100ppm/Cel, Surface Mount, 0603, CHIP, ROHS COMPLIANT

HV731JTTPD913J 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CHIP, ROHS COMPLIANT
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8533.21.00.30风险等级:5.4
构造:ChipJESD-609代码:e3
安装特点:SURFACE MOUNT端子数量:2
最高工作温度:155 °C最低工作温度:-55 °C
封装高度:0.45 mm封装长度:1.6 mm
封装形状:RECTANGULAR PACKAGE封装形式:SMT
封装宽度:0.8 mm包装方法:TR, PUNCHED PAPER, 10 INCH
额定功率耗散 (P):0.1 W额定温度:70 °C
电阻:91000 Ω电阻器类型:FIXED RESISTOR
系列:HV73尺寸代码:0603
子类别:Fixed Resistors表面贴装:YES
技术:METAL GLAZE/THICK FILM温度系数:100 ppm/ °C
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形状:WRAPAROUND
容差:5%工作电压:350 V
Base Number Matches:1

HV731JTTPD913J 数据手册

  
RESISTORS  
FLAT CHIP  
TECHNOLOGY OF TOMORROW  
THICK FILM  
HIGH VOLTAGE  
HV73  
STRUCTURE  
1
2
3
4
5
6
7
8
9
Ceramic substrate  
Top termination (Ag Pd)  
Bottom termination (Ag)  
Resistive layer  
Glass layer  
Trimming cut  
Protective layer  
End termination  
Diffusion barrier (Ni)  
10 Solder plating  
IDENTIFICATION  
COATING  
COLOR  
TYPE  
MARKING  
All these products have  
Pb-free terminations  
and meet RoHS requirements  
HV73 1J  
HV73 2A, 2B, 2H  
None  
White, 3 digits  
Black  
TYPE DESIGNATION (HOW TO ORDER)  
HV73  
2B  
T
TD  
1004  
F
TAPING*  
TERMINATION  
SURFACE MATERIAL  
T: Sn  
NOMINAL  
RESISTANCE  
J, G: 3 digits  
TOLERANCE  
D: 0.5ꢀ  
F: 1ꢀ  
STYLE  
1J: 0.1W  
2A: 0.125W  
2B: 0.25W  
2H: 0.5W  
PRODUCT CODE  
TD: punched paper tape  
TE: embossed plastic tape  
BK: Bulk  
D, F: 4 digits  
G: 2ꢀ  
*Please see “PACKAGING”  
J: 5ꢀ  
DIMENSIONS (mm)  
FEATURES  
Superior to RK73-series in maximum working voltage  
Higher critical R-value than standard RK73-series  
SIZE  
TYPE  
L
0ꢀ2  
1.6  
W
c
d
t
0ꢀ1  
RuO thick film resistor element  
2
NEW 0603  
0805  
HV73 1J  
0.8  
0.1  
0.3 0.1  
0.3 0.1  
0.45  
0.5  
Anti-leaching nickel barrier terminations  
+0.2  
–0.1  
Excellent heat resistance and moisture resistance are ensured  
by the use of metal glaze thick film  
HV73 2A  
HV73 2B  
HV73 2H  
2.0  
3.2  
5.0  
1.25 0.1  
1.6 0.2  
2.5 0.2  
0.4 0.2  
0.5 0.3  
0.5 0.3  
0.3  
1206  
2010  
+0.2  
–0.1  
Ideal for use in AV adapters, LCD back-light, camera strobe,  
electronic lighting ballast etc.  
Rated ambient temperature: +70°C  
0.4  
0.6  
NEW  
Operating temperature range: -55°C…+155°C  
Meets or exceeds IEC 60115-8, JIS C 5201-8, EIAJ RC-2134A  
Suitable for reflow and wave soldering  
DERATING CURVE  
Ambient temperature (°C)  
RATING  
MAXꢀ  
WORKING  
VOLTAGE  
MAXꢀ  
OVERLOAD  
VOLTAGE**  
RESISTANCE RANGE (E24)  
F ( 1ꢁ) G ( 2ꢁ)  
10 kΩ … 10 MΩ 10 kΩ … 10 MΩ 10 kΩ … 10 MΩ  
100 kΩ … 10 MΩ 100 kΩ … 10 MΩ 100 kΩ… 10 MΩ  
11 MΩ… 51 MΩ  
100 kΩ … 10 MΩ 100 kΩ … 10 MΩ 100 kΩ… 10 MΩ  
11 MΩ… 51 MΩ  
TCꢀRꢀ  
POWER*  
RATING  
SIZE  
TYPE  
(ppm/K)  
D ( 0ꢀ5ꢁ)  
J ( 5ꢁ)  
NEW  
0603  
0805  
HV73 1J  
HV73 2A  
100***  
0.1 W  
350 V  
500 V (DC)  
100  
200  
100  
100 kΩ … 1 MΩ  
100 kΩ … 1 MΩ  
0.125 W  
400 V  
800 V (DC)  
1206  
2010  
HV73 2B  
HV73 2H  
0.25 W  
0.5 W  
500 V  
1000 V (DC)  
200  
100  
****  
100 kΩ … 1 MΩ  
100 kΩ … 10 MΩ 100 kΩ … 10 MΩ 100 kΩ… 10 MΩ  
NEW  
2000 V (DC) 3000 V (DC)  
200  
11 MΩ… 51 MΩ  
*
For resistors operated at an ambient temperature of +70°C or above, the power rating shall be derated in accordance with the above derating curve  
.
**  
Max. overload voltage is specified by D.C. voltage. When using in A.C. voltage, the peak value of A.C. voltage shall not exceed the maximum overload voltage  
***  
In the ohmic range between 1.1 MΩ…10 MΩ the specified T.C.R. is 200 ppmꢁK in the temperature range -55°C…+25°C. At temperatures +25°…+125°C the T.C.R. is specified with 100 ppmꢁK.  
**** Max. working voltage of 2H-size is specified by D.C. voltage.  
EUROPE GmbH • Kaddenbusch 6 • D-25578 Dägeling / ITZEHOE • PHONE: +49 (0) 48 21/89 89-0 • FAX: +49 (0) 48 21/89 89 89 • Internet: www.koaeurope.de  
11  
Revision: 16. May 2006  

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