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HUF76445S3S PDF预览

HUF76445S3S

更新时间: 2024-11-23 22:55:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 210K
描述
75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

HUF76445S3S 数据手册

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HUF76445P3, HUF76445S3S  
Data Sheet  
December 2001  
75A, 60V, 0.0075 Ohm, N-Channel, Logic  
Level UltraFET® Power MOSFET  
Packaging  
Features  
JEDEC TO-220AB  
JEDEC TO-263AB  
• Ultra Low On-Resistance  
SOURCE  
DRAIN  
(FLANGE)  
- r  
- r  
= 0.0065Ω, VGS = 10V  
DS(ON)  
DS(ON)  
DRAIN  
GATE  
= 0.0075Ω, V  
GS  
= 5V  
• Simulation Models  
GATE  
- Temperature Compensated PSPICE® and SABER™  
Electrical Models  
SOURCE  
DRAIN  
(FLANGE)  
- Spice and SABER Thermal Impedance Models  
- www.fairchildsemi.com  
HUF76445P3  
HUF76445S3S  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
Symbol  
• Switching Time vs R  
Curves  
GS  
D
S
Ordering Information  
PART NUMBER  
HUF76445P3  
PACKAGE  
BRAND  
76445P  
76445S  
G
TO-220AB  
TO-263AB  
HUF76445S3S  
NOTE: When ordering, use the entire part number. Add the suffix T  
to obtain the variant in tape and reel, e.g., HUF76445S3ST.  
o
Absolute Maximum Ratings  
T = 25 C, Unless Otherwise Specified  
C
HUF76445P3, HUF76445S3S  
UNITS  
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
60  
60  
V
V
V
DSS  
Drain to Gate Voltage (R  
GS  
= 20k) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±16  
GS  
Drain Current  
o
Continuous (T = 25 C, V  
C
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
75  
75  
75  
A
A
A
A
GS  
GS  
D
D
o
Continuous (T = 25 C, V  
C
o
Continuous (T = 100 C, V  
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
C
GS  
D
o
Continuous (T = 100 C, V  
75  
C
GS  
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Figure 4  
DM  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Figures 6, 17, 18  
310  
2.08  
W
W/ C  
D
o
o
o
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
J
-55 to 175  
C
STG  
Maximum Temperature for Soldering  
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
o
300  
260  
C
C
L
o
pkg  
NOTES:  
1. T = 25 C to 150 C.  
o
o
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html  
For severe environments, see our Automotive HUFA series.  
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.  
©2001 Fairchild Semiconductor Corporation  
HUF76445P3, HUF76445S3S Rev. B  

HUF76445S3S 替代型号

型号 品牌 替代类型 描述 数据表
FDB5800 FAIRCHILD

类似代替

N-Channel Logic Level PowerTrench MOSFET

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