HUF76445P3, HUF76445S3S
Data Sheet
December 2001
75A, 60V, 0.0075 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Features
JEDEC TO-220AB
JEDEC TO-263AB
• Ultra Low On-Resistance
SOURCE
DRAIN
(FLANGE)
- r
- r
= 0.0065Ω, VGS = 10V
DS(ON)
DS(ON)
DRAIN
GATE
= 0.0075Ω, V
GS
= 5V
• Simulation Models
GATE
- Temperature Compensated PSPICE® and SABER™
Electrical Models
SOURCE
DRAIN
(FLANGE)
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
HUF76445P3
HUF76445S3S
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Symbol
• Switching Time vs R
Curves
GS
D
S
Ordering Information
PART NUMBER
HUF76445P3
PACKAGE
BRAND
76445P
76445S
G
TO-220AB
TO-263AB
HUF76445S3S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76445S3ST.
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
HUF76445P3, HUF76445S3S
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
60
60
V
V
V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±16
GS
Drain Current
o
Continuous (T = 25 C, V
C
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
75
75
75
A
A
A
A
GS
GS
D
D
o
Continuous (T = 25 C, V
C
o
Continuous (T = 100 C, V
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
GS
D
o
Continuous (T = 100 C, V
75
C
GS
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Figure 4
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figures 6, 17, 18
310
2.08
W
W/ C
D
o
o
o
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 175
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
NOTES:
1. T = 25 C to 150 C.
o
o
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76445P3, HUF76445S3S Rev. B