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HSM105-W

更新时间： 2024-01-19 19:36:51
品牌 Logo 应用领域
RECTRON 整流二极管功效
页数 文件大小 规格书
2页 30K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2

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HSM105-W 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：MELF包装说明：MELF-2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.18其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-PELF-R2JESD-609代码：e3
元件数量：1端子数量：2
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：400 V最大反向恢复时间：0.05 µs
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：10Base Number Matches：1

HSM105-W 数据手册

 浏览型号HSM105-W的Datasheet PDF文件第2页 
HSM101  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
HSM106  
SURFACE MOUNT GLASS PASSIVATED  
HIGH EFFICIENCY SILICON RECTIFIER  
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere  
FEATURES  
* Fast switching  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.015 gram  
MELF  
MECHANICAL DATA  
*
Epoxy : Device has UL flammability classification 94V-0  
(
)
)
.205 5.2  
SOLDERABLE  
ENDS  
(
.190 4.8  
(
)
.028 .60  
(
)
.018 .46  
(
)
.106 2.7  
(
)
.095 2.4  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
HSM101 HSM102 HSM103 HSM104 HSM105 HSM106  
UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Volts  
V
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
V
DC  
O
100  
I
1.0  
30  
Amps  
Amps  
at TA  
= 50oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Typical Junction Capacitance (Note 2)  
C
J
15  
12  
pF  
0 C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
UNITS  
Volts  
CHARACTERISTICS  
SYMBOL  
HSM101 HSM102 HSM103 HSM104 HSM105 HSM106  
Maximum Instantaneous Forward Voltage at 1.0A DC  
V
F
1.0  
1.3  
1.70  
TA  
= 25oC  
5.0  
uAmps  
Maximum DC Reverse Current at Rated DC Blocking Voltage  
Maximum Full Load Reverse Current Average,  
I
R
100  
uAmps  
Full Cycle .375” (9.5mm) lead length at  
Maximum Reverse Recovery Time (Note 1)  
NOTES : 1. Test Conditions: I =0.5A, I =-1.0A, IRR=-0.25A.  
2. Measured at 1 MH and applied reverse voltage of 4.0 volts.  
TL  
= 55oC  
trr  
50  
75  
nSec  
F
R
2001-4  
Z
12

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