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HSM107S PDF预览

HSM107S

更新时间: 2024-01-08 15:24:39
品牌 Logo 应用领域
科信 - KEXIN 肖特基二极管光电二极管
页数 文件大小 规格书
1页 36K
描述
Silicon Schottky Barrier Diode

HSM107S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.61
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL认证状态:Not Qualified
表面贴装:YES技术:AVALANCHE
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:20
Base Number Matches:1

HSM107S 数据手册

  
SMD Type  
Diodes  
Silicon Schottky Barrier Diode  
HSM107S  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Low VF and high efficiency.  
1
2
HSM107S which is interconnected in series configuration is designed  
for protection from not only external excessive voltage but also  
miss-operation on electric systems.  
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
MPAK package is suitable for high density surface mounting and high speed assembly.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
Value  
Unit  
V
Reverse voltage  
VR  
8
0.1  
Peak forward current  
Non-Repetitive Peak forward surge current  
Average rectified current  
Junction temperature  
Storage temperature  
Note  
IFM  
A
IFSM (Note 1)  
0.5  
A
IO  
Tj  
50  
mA  
125  
Tstg  
-55 to +125  
1. Square wave, 10ms  
Electrical Characteristics Ta = 25  
Parameter  
Reverse voltage  
Symbol  
VR  
Conditions  
VR =1.0 mA  
VR = 5 V  
Min  
Typ  
Max  
Unit  
pF  
A
8
Reverse current  
Forward voltage  
IR  
30  
VF  
IF = 10 mA  
0.3  
V
C=200pF , Both forward and  
reverse direction 1 pulse.  
ESD-Capability (Note 1)  
100  
V
Note  
1. Failure criterion ; IR  
60 A at VR =5 V  
Marking  
Marking  
C5  
1
www.kexin.com.cn  

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