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HSM106-W PDF预览

HSM106-W

更新时间： 2024-09-30 13:08:23
品牌 Logo 应用领域
RECTRON 二极管功效
页数 文件大小 规格书
5页 271K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2

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中文翻译

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HSM106-W 技术参数

是否Rohs认证：符合生命周期：Active
零件包装代码：MELF包装说明：MELF-2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.73Is Samacsys：N
其他特性：METALLURGICALLY BONDED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-PELF-R2
JESD-609代码：e3元件数量：1
端子数量：2最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.075 µs表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：10
Base Number Matches：1

HSM106-W 数据手册

 浏览型号HSM106-W的Datasheet PDF文件第2页浏览型号HSM106-W的Datasheet PDF文件第3页浏览型号HSM106-W的Datasheet PDF文件第4页浏览型号HSM106-W的Datasheet PDF文件第5页 
HSM101  
THRU  
HSM108  
SURFACE MOUNT GLASS PASSIVATED  
HIGH EFFICIENCY SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.015 gram  
MELF  
MECHANICAL DATA  
* Epoxy : Device has UL flammability classification 94V-0  
.205 ( 5.2 )  
.190 ( 4.8 )  
SOLDERABLE  
ENDS  
DISCONTINUED-  
"This series is replaced by the HFM10X series that meets to the same  
fit and function parameters and share the same solder pad layout.  
The HFM10X series is preferred for error-free vacuum pick-up and  
PCB assembly."  
.024 ( 0.6 )  
.016 ( 0.4 )  
.106 ( 2.7 )  
.095 ( 2.4 )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
SYMBOL HSM101 HSM102 HSM103 HSM104 HSM105 HSM106 HSM107 HSM108 UNITS  
RATINGS  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
800  
490  
800  
1000  
700  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
100  
Maximum DC Blocking Voltage  
1000  
Maximum Average Forward Rectified Current  
IO  
1.0  
30  
Amps  
Amps  
O
at T = 50 C  
A
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
Typical Junction Capacitance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
CJ  
TJ  
15  
12  
pF  
0 C  
150  
TSTG  
-55 to + 150  
0 C  
O
ELECTRICAL CHARACTERISTICS(@T  
A
=25 C unless otherwise noted)  
CHARACTERISTICS  
SYMBOL HSM101 HSM102 HSM103 HSM104 HSM105 HSM106 HSM107 HSM108 UNITS  
Maximum Instantaneous Forward Voltage at 1.0A DC  
1.0  
1.3  
1.7  
Volts  
VF  
Maximum Full Load Reverse Current, Full  
O
50  
µA  
µA  
cycle Average T =55 C  
A
IR  
@TA = 25oC  
@TA = 125oC  
Maximum Average Reverse Current  
at Rated DC Blocking Voltage  
5
100  
µA  
Maximum Reverse Recovery Time (Note 4)  
50  
75  
nSec  
trr  
1. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.  
NOTES :  
2007-5  
3. Test Conditions: I = 0.5A, I = -1.0A, I = -0.25A.  
RR  
F
R
12345

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