是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SFP-2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.91 | Is Samacsys: | N |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 0.8 V |
JESD-30 代码: | R-PDSO-F2 | 最大非重复峰值正向电流: | 4 A |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 125 °C | 最大输出电流: | 0.1 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 85 V |
最大反向恢复时间: | 0.003 µs | 子类别: | Rectifier Diodes |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HSD128M72B9K | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD128M72B9K-10 | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD128M72B9K-10L | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD128M72B9K-12 | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD128M72B9K-13 | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD128M72B9K-F10 | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD128M72B9K-F10L | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD128M72B9K-F12 | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD128M72B9K-F13 | HANBIT |
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Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM, | |
HSD1606-140H | ETC |
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Synchro-to-Digital Converter |