Datasheet > HSD128M72B9K-10

HSD128M72B9K-10

更新时间： 2024-11-24 05:38:39

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
11页	207K
描述
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,

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HSD128M72B9K-10 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

HSD128M72B9K-10 数据手册

HANBit

HSD128M72B9K

Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V

ECC Unbuffered SO-DIMM,

Part No. HSD128M72B9K

GENERAL DESCRIPTION

The HSD128M72B9K is a 128M x 72 bit Synchronous Dynamic RAM high density memory module. The module

consists of nine CMOS 128M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-

epoxy substrate. One or two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each

SDRAM. The HSD128M72B9K is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting

into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O

transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same

device to be useful for a variety of high bandwidth, high performance memory system applications All module components

may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• JEDEC standard 3.3V power supply

• Burst mode operation

• Auto & self refresh capability (8192 Cycles/64ms)

• LVTTL compatible with multiplexed address

• Separate power and ground planes to improve immunity

• Height : 1.250 inches

• MRS cycle with address key programs

- CAS latency (2 & 3)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• The used device is 16M x 8bit x 4Banks Synchronous DRAM

• Part Identification

HSD128M72B9K-F/10L : 100MHz (CL=3)

HSD128M72B9K-F/10 : 100MHz (CL=2)

HSD128M72B9K-F/12 : 125MHz (CL=3)

HSD128M72B9K-F/13 : 133MHz (CL=3)

** F means Auto & Self refresh with Low-Power (3.3V)

URL : www.hbe.co.kr

REV.0.0(January. 2003)

HANBit Electronics Co.,Ltd.

12 3 4 5 6 7...11

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与HSD128M72B9K-10相关器件

型号	品牌	获取价格	描述	数据表
HSD128M72B9K-10L	HANBIT	获取价格	Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
HSD128M72B9K-12	HANBIT	获取价格	Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
HSD128M72B9K-13	HANBIT	获取价格	Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
HSD128M72B9K-F10	HANBIT	获取价格	Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
HSD128M72B9K-F10L	HANBIT	获取价格	Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
HSD128M72B9K-F12	HANBIT	获取价格	Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
HSD128M72B9K-F13	HANBIT	获取价格	Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
HSD1606-140H	ETC	获取价格	Synchro-to-Digital Converter
HSD1606-140S	ETC	获取价格	Synchro-to-Digital Converter
HSD1606-140V	ETC	获取价格	Synchro-to-Digital Converter

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