Datasheet > HRW0202A

HRW0202A

更新时间： 2024-02-12 09:00:02

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	35K
描述
Silicon Schottky Barrier Diode

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中文翻译

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数据手册

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HRW0202A 数据手册

SMD Type

Diodes

Silicon Schottky Barrier Diode

HRW0202A

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low forward voltage drop and suitable for

high effifiency rectifying.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

MPAK package is suittable for high density

surface mounting and high speed assembly.

1.Base

2.Emitter

3.collector

A bsolute M axim um R atings T a = 25

P aram eter

R epetitive peak reverse voltage

A verage rectified current

S ym bol

V ^{R R M}

I^O

V alue

U nit

m A

200

N on-repetitive peak forw ard surge current

Junction tem perature

I^{F S M}

T ^j

125

S torage tem perature

T stg

-55 to + 125

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

V^F

Conditions

Min

Typ

350

Max

Unit

IF = 100 mA

VR = 20 V

0.40

Reverse current

I^R

Thermal resistance

T^{th( j- a )}

Polyimide board

Marking

S17

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中文翻译

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与HRW0202A相关器件

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HRW0202A-E	RENESAS	获取价格	0.2A, 30V, 2 ELEMENT, SILICON, SIGNAL DIODE, MPAK-3
HRW0202ATL	RENESAS	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 20V V(RRM), Silicon
HRW0202ATL-E	RENESAS	获取价格	0.2A, 20V, 2 ELEMENT, SILICON, SIGNAL DIODE
HRW0202ATR	HITACHI	获取价格	暂无描述
HRW0202ATR	RENESAS	获取价格	0.2A, 20V, 2 ELEMENT, SILICON, SIGNAL DIODE
HRW0202ATR-E	RENESAS	获取价格	0.2A, 20V, 2 ELEMENT, SILICON, SIGNAL DIODE
HRW0202B	TYSEMI	获取价格	Low forward voltage drop and suitable for high effifiency rectifying
HRW0202B	HITACHI	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRW0202B	KEXIN	获取价格	Silicon Schottky Barrier Diode
HRW0202B	RENESAS	获取价格	Silicon Schottky Barrier Diode for Rectifying