Datasheet > HRW0202B

HRW0202B

更新时间： 2024-02-18 04:37:56

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	35K
描述
Silicon Schottky Barrier Diode

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中文翻译

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数据手册

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HRW0202B 数据手册

SMD Type

Diodes

Silicon Schottky Barrier Diode

HRW0202B

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low forward voltage drop and suitable for

high effifiency rectifying.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

MPAK package is suittable for high density

surface mounting and high speed assembly.

1.Base

2.Emitter

3.collector

Absolute M axim um R atings T a = 25

P aram eter

R epetitive peak reverse voltage

A verage rectified current

S ym bol

V ^{R R M}

I^O

V alue

U nit

200

m A

N on-repetitive peak forward surge current

Junction tem perature

I^{F SM}

T^j

125

S torage tem perature

Tstg

-55 to + 125

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

V^F

Conditions

Min

Typ

400

Max

Unit

IF = 100 mA

VR = 20 V

0.42

Reverse current

I^R

Thermal resistance

T^{sh( j-a )}

Polyimide board

Marking

S18

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中文翻译

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与HRW0202B相关器件

型号	品牌	获取价格	描述	数据表
HRW0202BTL	HITACHI	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 20V V(RRM), Silicon
HRW0202BTR	HITACHI	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 20V V(RRM), Silicon
HRW0202BTR	RENESAS	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 20V V(RRM), Silicon
HRW0202BTR-E	RENESAS	获取价格	0.1A, 20V, SILICON, SIGNAL DIODE
HRW0203A	TYSEMI	获取价格	Low forward voltage drop and suitable for high effifiency rectifying
HRW0203A	KEXIN	获取价格	Silicon Schottky Barrier Diode
HRW0203A	RENESAS	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRW0203A	HITACHI	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRW0203A-E	RENESAS	获取价格	0.2A, 30V, SILICON, SIGNAL DIODE, MPAK-3
HRW0203ATL	HITACHI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon