HRW0202B

更新时间： 2024-02-20 00:41:57

品牌	Logo	应用领域
瑞萨 - RENESAS		整流二极管肖特基二极管光电二极管
页数	文件大小	规格书
6页	72K
描述
Silicon Schottky Barrier Diode for Rectifying

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HRW0202B 技术参数

HRW0202B

Silicon Schottky Barrier Diode for Rectifying

REJ03G0153-0200Z

(Previous: ADE-208-345A)

Rev.2.00

Dec.15.2003

Features

•

Low forward voltage drop and suitable for high efficiency rectifying.

MPAK Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

Laser Mark

Package Code

HRW0202B

S18

MPAK

Pin Arrangement

1. Anode

2. Anode

(Top View)

3. Cathode

Rev.2.00, Dec.15.2003, page 1 of 5

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
HRW0202BTL	HITACHI	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 20V V(RRM), Silicon
HRW0202BTR	HITACHI	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 20V V(RRM), Silicon
HRW0202BTR	RENESAS	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 20V V(RRM), Silicon
HRW0202BTR-E	RENESAS	获取价格	0.1A, 20V, SILICON, SIGNAL DIODE
HRW0203A	TYSEMI	获取价格	Low forward voltage drop and suitable for high effifiency rectifying
HRW0203A	KEXIN	获取价格	Silicon Schottky Barrier Diode
HRW0203A	RENESAS	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRW0203A	HITACHI	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRW0203A-E	RENESAS	获取价格	0.2A, 30V, SILICON, SIGNAL DIODE, MPAK-3
HRW0203ATL	HITACHI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon