Datasheet > HRT0100-EF

HRT0100-EF

更新时间： 2024-11-02 19:25:27

品牌	Logo	应用领域
霍尼韦尔 - HONEYWELL		静态存储器内存集成电路
页数	文件大小	规格书
12页	1364K
描述
Standard SRAM

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中文翻译

获取价格

技术参数
数据手册

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HRT0100-EF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.77
内存集成电路类型：	STANDARD SRAM	Base Number Matches：	1

HRT0100-EF 数据手册

HRT6408

HRT6408 512k x 8 Static RAM

Radiation Tolerant

Features

■

Fabricated on S150 Silicon On

Insulator (SOI) CMOS

■

150 nm Process (Leff = 110 nm)

Read/Write Cycle Times

Typical Write = 7 ns

Typical Read = 12ns

■

Asynchronous Operation

CMOS Compatible I/O

Total Dose ≥3X10 rad(Si)

Soft Error Rate

-12

Heavy Ion ≤1x10

-12

Proton ≤ 2x10

Upsets/bit-day

■

Upsets/bit-day

Neutron ≥1x10 N/cm

No Latchup

Core Operating Voltage

1.8 V ± 0.15 V

■

I/O Voltages

3.3 V ± 0.3 V

2.5 V ± 0.2 V

■

Operating Range is

-55°C to +125°C

36-Lead Flat Pack Package

The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance

524,288 word x 8-bit static random access memory, fabricated with Honeywell’s

150nm silicon-on-insulator CMOS (S150) technology.

It is designed for use in low voltage

systems operating in radiation sensitive

environments. The RAM operates over

the full military temperature range and

can operate on power supplies of 1.8V,

2.5V or 3.3V. The SRAM supports I/O

voltages of 3.3V and 2.5V.

process hardening techniques. There

is no internal EDAC implemented.

It is a low power process with a minimum

drawn feature size of 150 nm. This

delivers high speed with typical READ

access time of 12ns, WRITE time of 7ns

and a low power consumption of 35

mW at 40 MHz. A seven transistor (7T)

memory cell is used for superior single

event upset hardening.

Honeywell’s S150 technology is radiation

hardened through the use of advanced

and proprietary design, layout and

12 3 4 5 6 7...12

中文翻译

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