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HRF3205 PDF预览

HRF3205

更新时间: 2024-02-08 04:05:33
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 189K
描述
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

HRF3205 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.16
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):100 A最大漏极电流 (ID):100 A
最大漏源导通电阻:0.008 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):175 W最大脉冲漏极电流 (IDM):390 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

HRF3205 数据手册

 浏览型号HRF3205的Datasheet PDF文件第1页浏览型号HRF3205的Datasheet PDF文件第2页浏览型号HRF3205的Datasheet PDF文件第3页浏览型号HRF3205的Datasheet PDF文件第5页浏览型号HRF3205的Datasheet PDF文件第6页浏览型号HRF3205的Datasheet PDF文件第7页 
HRF3205, HRF3205S  
Typical Performance Curves (Continued)  
20  
16  
12  
8
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
I
= 59A  
V
= 0V, f = 1MHz  
D
GS  
ISS  
C
C
C
= C  
+ C  
V
= 28V  
= 44V  
GS  
GD  
DS  
= C  
C + C  
RSS  
OSS  
GD  
DS  
V
= 11V  
GS  
DS  
C
ISS  
V
DS  
C
OSS  
4
C
RSS  
0
0
36  
72  
108  
144  
180  
1
10  
, DRAIN TO SOURCE VOLTAGE (V)  
100  
V
Q , GATE CHARGE (nC)  
DS  
g
FIGURE 5. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE  
FIGURE 6. GATE CHARGE WAVEFORMS FOR CONSTANT  
GATE CURRENT  
1000  
1000  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX  
10µs  
o
T
= 175 C  
J
100  
10  
1
100  
100µs  
OPERATION IN THIS  
1ms  
AREA MAY BE  
o
T
= 25 C  
J
LIMITED BY r  
DS(ON)  
10  
1
10ms  
V
= 55V  
DSS(MAX)  
0.5  
1.0  
1.5  
2.0  
1
10  
, DRAIN TO SOURCE VOLTAGE (V)  
100  
V
, SOURCE TO DRAIN VOLTAGE (V)  
V
DS  
SD  
FIGURE 7. SOURCE TO DRAIN DIODE FORWARDVOLTAGE  
120  
FIGURE 8. FORWARD BIAS SAFE OPERATING AREA  
1000  
If R = 0  
= (L)(I )/(1.3*RATED BV  
t
- V  
)
DD  
AV  
If R 0  
= (L/R)ln[(I *R)/(1.3*RATED BV  
AS  
DSS  
t
AV  
- V ) +1]  
DD  
AS DSS  
90  
60  
30  
100  
o
STARTING T = 25 C  
J
o
STARTING T = 150 C  
J
CURRENT LIMITED  
BY PACKAGE  
0
25  
10  
0.01  
50  
75  
100  
125  
150  
175  
0.1  
t
1
10  
, TIME IN AVALANCHE (ms)  
AV  
100  
o
T , CASE TEMPERATURE ( C)  
C
FIGURE 9. MAXIMUM CONTINUOUS DRAIN CURRENT vs  
CASE TEMPERATURE  
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING  
CAPABILITY  
©2001 Fairchild Semiconductor Corporation  
HRF3205, HRF3205S Rev. B  

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